Thickness-dependent dielectric, ferroelectric, and magnetodielectric properties of BiFeO 3thin films derived by chemical solution deposition

Journal of the American Ceramic Society

Volumn 95, Issue 2, 2012, Pages 538-544

  Tang, Xianwu ^a   Dai, Jianming ^a   Zhu, Xuebin ^a   Lin, Jianchao ^a   Chang, Qing ^a   Wu, Dajun ^a   Song, Wenhai ^a   Sun, Yuping ^a,b  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL SOLUTION DEPOSITION; DIFFERENT THICKNESS; MAGNETODIELECTRIC PROPERTY; MAGNETODIELECTRICS; MULTIFERROICS; THICKNESS EFFECT;

BISMUTH COMPOUNDS; CHEMICALS; OPTIMIZATION; THIN FILMS; VAPOR DEPOSITION;

DEPOSITION;

EID: 84856526793     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2011.04920.x     Document Type: Article

References (37)

1. 3Multiferroic Thin Film Heterostructures," Science, 299 [ 5613 ] 1719, 4pp (2003).
2. R. Thomas, J. F. Scott, D. N. Bose, and, R. S. Katiyar, " Multiferroic Thin-Film Integration onto Semiconductor Devices," J. Phys. Condens. Matter, 22 [ 42 ] 3201, 17pp (2010).
3. 3," Sov. Phys. Crystallogr., 23 [ 1 ] 47, 5pp (1966).
4. S. V. Kiselev, A. N. Kshnyakina, R. P. Ozerov, and, G. S. Zhdanov, " Neutron Diffraction Study of Magnetic Ordering and Atomic Displacements in Some Perovskite Like Substances Containing Iron and Exhibiting Peculiar Dielectric Properties," Sov. Phys. Solid State, 5 [ 11 ] 2425, 4pp (1964).
5. 3," Acta Crystallogr. Sect. B: Struct. Sci., B46, 698, 5pp (1990).
6. 3Buffer Layer by rf Sputtering," J. Appl. Phys., 101 [ 5 ] 054104, 5pp (2007).
7. 3Thin Films Prepared by MOCVD," Surf. Coat. Technol., 201 [ 22-23 ] 9149, 5pp (2007).
8. R. W. Schwartz, " Chemical Solution Deposition of Perovskite Thin Films," Chem. Mater., 9 [ 11 ] 2325, 16pp (1997).
9. 3Thin Films," Integrated Ferroelectrics, 98 [ 1 ] 83, 7pp (2008).
10. 3Film Fabricated by Chemical Solution Deposition," J. Appl. Phys., 101 [ 9 ] 09M103, 3pp (2007).
11. 3Thin Films Fabricated by Chemical Solution Deposition," J. Appl. Phys., 100 [ 6 ] 064102, 5pp (2006).
12. 3Films by Chemical Solution Deposition," J. Am. Ceram. Soc., 93 [ 6 ] 1682, 6pp (2010).
13. 3Film," Appl. Phys. Lett., 98 [ 14 ] 142902, 3pp (2011).
14. 3Films by Chemical Solution Deposition on Pt(100)," J. Appl. Phys., 102 [ 7 ] 074108, 7pp (2007).
15. H. S. Chen, J. T. Krause, and, E. A. Sigety, " Thermal Expansion and Density of Glassy Pd-Ni-P and Pt-Ni-P Alloys," J. Non-Cryst. Solids, 13 [ 2 ] 321, 7pp (1974).
16. 3Thin Films," J. Appl. Phys., 106 [ 10 ] 104111, 5pp (2009).
17. 3Thin Films," J. Appl. Phys., 86 [ 5 ] 2700, 12pp (1999).
18. A. L. Patterson, " The Scherrer Formula for X-Ray Particle Size Determination," Phys. Rev., 56 [ 10 ] 978, 5pp (1939).
19. J. Pérez de la Cruz, E. Joanni, P. M. Vilarinho, and, A. L. Kholkin, " Thickness Effect on the Dielectric, Ferroelectric, and Piezoelectric Properties of Ferroelectric Lead Zirconate Titanate Thin Films," J. Appl. Phys., 108 [ 11 ] 114106, 8pp (2010).
20. 3Thin Films Deposited on Pt/Ti/Si(100) Substrates," Acta Mater., 50 [ 17 ] 4241, 4pp (2002).
21. F. Xu, S. T. McKinstry, W. Ren, B. M. Xu, Z. L. Xie, and, K. J. Hemker, " Domain Wall Motion and its Contribution to the Dielectric and Piezoelectric Properties of Lead Zirconate Titanate Films," J. Appl. Phys., 89 [ 2 ] 1336, 13pp (2001).
22. M. Dawber, K. M. Rabe, and, J. F. Scott, " Physics of Thin-Film Ferroelectric Oxides," Rev. Mod. Phys., 77 [ 4 ] 1083, 48pp (2005).
23. M. A. Lampert, and, P. Mark, Current Injection in Solids. Academic, New York, p. 23, 1970.
24. 3Thin Films Grown at Various Oxygen Pressures by Pulsed Laser Deposition and Annealing Effect," J. Appl. Phys., 99 [ 5 ] 054104, 5pp (2006).
25. A. Rose, " Space-Charge-Limited Currents in Single Crystal of Cadmium Sulfide," Phys. Rev., 97 [ 6 ] 1538, 6pp (1955).
26. 3Films," Appl. Phys. Lett., 86 [ 7 ] 062903, 3pp (2005).
27. J. F. Scott, C. A. Araujo, B. M. MElnick, L. D. McMillan, and, R. Zuleeg, " Quantitative Measurement of Space-Charge Effects in Lead Zirconate-Titanate Memories," J. Appl. Phys., 70 [ 1 ] 382, 7pp (1991).
28. P. K. Larsen, G. J. Dormas, D. J. Taylor, and, P. I. van Veldhoven, " Thickness Effect on the Dielectric, Ferroelectric, and Piezoelectric Properties of Ferroelectric Lead Zirconate Titanate Thin Films," J. Appl. Phys., 76 [ 4 ] 2405, 8pp (1994).
29. 3Thin Films by Chemical Solution Deposition," J. Appl. Phys., 106 [ 6 ] 063911, 5pp (2009).
30. 3Thin Films Fabricated by Chemical Solution Deposition," Jpn. J. Appl. Phys., 44 [ 12 ] 8525, 3pp (2005).
31. J. F. M. Cillessen, M. W. J. Prins, and, R. M. Wolf, " Thickness Dependence of the Switching Voltage in All-Oxide Ferroelectric Thin-Film Capacitors Prepared by Pulsed Laser Deposition," J. Appl. Phys., 81 [ 6 ] 2777, 7pp (1997).
32. S. M. Sze, Physics of Semiconductor Devices, 2nd edition. Wiley, New York, 1981.
33. 3Thin Films Prepared via a Simple Chemical Solution Deposition," J. Appl. Phys., 101 [ 7 ] 074108, 6pp (2007).
34. 9," J. Appl. Phys., 88 [ 10 ] 6092, 1pp (2000).
35. A. K. Tagantsev, and, I. A. Stolichnov, " Injection-Controlled Size Effect on Switching of Ferroelectric Thin Films," Appl. Phys. Lett., 74 [ 9 ] 1326, 3pp (1999).
36. 3Nanoparticles," Nano Lett., 7 [ 3 ] 766, 7pp (2007).
37. G. Catalan, " Magnetocapacitance without Magnetoelectric Coupling," Appl. Phys. Lett., 88 [ 10 ] 102902, 3pp (2006).