Substrate effect on the resistive switching in BiFeO 3 thin films

Journal of Applied Physics

Volumn 111, Issue 7, 2012, Pages

  Shuai, Yao ^a,b   Ou, Xin ^a   Wu, Chuangui ^b   Zhang, Wanli ^b   Zhou, Shengqiang ^a   Brger, Danilo ^a   Reuther, Helfried ^a   Slesazeck, Stefan ^c   Mikolajick, Thomas ^c   Helm, Manfred ^a   Schmidt, Heidemarie ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^c NAMLAB GGMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION MECHANISM; FORWARD BIAS; GROWTH CONDITIONS; MICROSCOPIC STRUCTURES; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; SCHOTTKY CONTACTS; SUBSTRATE EFFECTS; SWITCHABLE;

CONTACTS (FLUID MECHANICS); PULSED LASER DEPOSITION; SILICON; SWITCHING SYSTEMS; THIN FILMS;

SUBSTRATES;

EID: 84861733036     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3672840     Document Type: Conference Paper

References (11)

1. D. S. Jeong, H. Schroeder, U. Breuer, and R. Waser, J. Appl. Phys. 104, 123716 (2008). 10.1063/1.3043879
2. D. Ielmini, F Nardi, and C. Cagli, Nanotechnology 22, 254022 (2011). 10.1088/0957-4484/22/25/254022
3. X. Cao, X. Li, X. Gao, X. Liu, C. Yang, R. Yang, and P. Jin, J. Phys. D: Appl. Phys. 44, 255104 (2011). 10.1088/0022-3727/44/25/255104
4. A. Sawa, T. Fujii, M. Kawasaki, and Y. Tokura, Appl. Phys. Lett. 85, 4073 (2004). 10.1063/1.1812580
5. R. Muenstermann, T. Menke, R. Dittmann, S. Mi, C. L. Jia, D. Park, and J. Mayer, J. Appl. Phys. 108, 124504 (2010). 10.1063/1.3520674
6. Y. Shuai, S. Zhou, D. Brger, M. Helm, and H. Schmidt, J. Appl. Phys. 109, 124117 (2011). 10.1063/1.3601113
7. Y. Shuai, S. Zhou, C. Wu, W. Zhang, D. Brger, S. Slesazeck, T. Mikolajick, M. Helm, and H. Schmidt, Appl. Phys. Express 4, 095802 (2011). 10.1143/APEX.4.095802
8. S. K. Singh, H. Ishiwara, and K. Maruyama, J. Appl. Phys. 100, 064102 (2006). 10.1063/1.2338836
9. S. Iakovlev, C. H. Solterbeck, M. Kuhnke, and M. Es-Souni, J. Appl. Phys. 97, 094901 (2005). 10.1063/1.1881776
10. Y. Shuai, S. Zhou, S. Streit, H. Reuther, D. Brger, S. Slesazeck, T. Mikolajick, M. Helm, and H. Schmidt, Appl. Phys. Lett. 98, 232901 (2011). 10.1063/1.3597794
11. C. H. Yang, J. Seidel, S. Y. Kim, P. B. Rossen, P. Yu, M. Gajek, Y. H. Chu, L. W. Martin, M. B. Holcomb, Q. He, P. Maksymovych, N. Balke, S. V. Kalinin, A. P. Baddorf, S. R. Basu, M. L. Scullin, and R. Ramesh, Nat. Mater. 8, 485 (2009). 10.1038/nmat2432