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Journal of Alloys and Compounds

Volumn 529, Issue , 2012, Pages 108-112

Annealing effect on the bipolar resistive switching behaviors of BiFeO 3 thin films on LaNiO 3-buffered Si substrates

(4) Chen, Xinman a,b Zhang, Hu b Ruan, Kaibin c Shi, Wangzhou b

a SOUTH CHINA NORMAL UNIVERSITY (China)

b SHANGHAI NORMAL UNIVERSITY (China)

c FUJIAN AGRICULTURE AND FORESTRY UNIVERSITY (China)

Author keywords

Annealing effect; BiFeO 3; Resistance switching; RRAM

Indexed keywords

ANNEALING EFFECTS; ASYMMETRICAL CONTACTS; BIFEO 3; ELECTRICAL BEHAVIORS; ELECTRICAL CONDUCTION MECHANISMS; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; OHMIC CONDUCTION; RECTIFICATION PROPERTIES; RESISTANCE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; RRAM; SI SUBSTRATES; SPACE CHARGED LIMITED CURRENTS; VACANCY DENSITY;

OXYGEN VACANCIES; SILICON; SOL-GELS; SWITCHING SYSTEMS; THIN FILMS;

ANNEALING;

EID: 84859507139 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2012.03.014 Document Type: Article

Times cited : (64)

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