Variability analysis of sense amplifier for FinFET subthreshold SRAM applications

IEEE Transactions on Circuits and Systems II: Express Briefs

Volumn 59, Issue 12, 2012, Pages 878-882

  Fan, Ming Long ^a   Hu, Vita Pi Ho ^a   Chen, Yin Nien ^a   Su, Pin ^a   Chuang, Ching Te ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Fin shaped field effect transistor (FinFET); sense amplifier (SA); subthreshold circuit; variability

Indexed keywords

ELECTRIC CURRENT REGULATORS; FINS (HEAT EXCHANGE); ROUGHNESS MEASUREMENT; STATIC RANDOM ACCESS STORAGE; THRESHOLD VOLTAGE;

ELECTROSTATIC INTEGRITY; FIN-SHAPED FIELD-EFFECT TRANSISTOR (FINFET); SENSE AMPLIFIER; STATIC RANDOM ACCESS MEMORY; STATISTICAL APPROACH; SUB-THRESHOLD CIRCUITS; VARIABILITY; VARIABILITY ANALYSIS;

FINFET;

EID: 84873405974     PISSN: 15497747     EISSN: 15583791     Source Type: Journal    
DOI: 10.1109/TCSII.2012.2231016     Document Type: Article

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