Investigation of cell stability and write ability of finfet subthreshold SRAM using analytical SNM model

IEEE Transactions on Electron Devices

Volumn 57, Issue 6, 2010, Pages 1375-1381

  Fan, Ming Long ^a   Wu, Yu Sheng ^a   Hu, Vita Pi Ho ^a   Su, Pin ^a   Chuang, Ching Te ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

FinFET; Poisson's equation; Static noise margin (SNM); Subthreshold SRAM

Indexed keywords

ANALYTICAL SOLUTIONS; BULK CMOS; CELL STABILITY; CONTROL TECHNIQUES; LINE VOLTAGE; MIXED MODE SIMULATION; POISSON'S EQUATION; PROCESS VARIATION; PROCESS-INDUCED VARIATION; SRAM APPLICATIONS; SRAM CELL; STATIC NOISE MARGIN; STATIC RANDOM ACCESS MEMORY; SUBTHRESHOLD; SUBTHRESHOLD REGION; TECHNOLOGY COMPUTER AIDED DESIGN; TEMPERATURE SENSITIVITY; TRANSISTOR SIZING;

CELLS; COMPUTER AIDED DESIGN; ELECTRIC POTENTIAL; POISSON EQUATION; STABILITY; THREE DIMENSIONAL; VOLTAGE REGULATORS;

STATIC RANDOM ACCESS STORAGE;

EID: 77953125526     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2046988     Document Type: Article

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