Comparison of 4T and 6T FinFET SRAM cells for subthreshold operation considering variability-A model-based approach

IEEE Transactions on Electron Devices

Volumn 58, Issue 3, 2011, Pages 609-616

  Fan, Ming Long ^a   Wu, Yu Sheng ^a   Hu, Vita Pi Ho ^a   Hsieh, Chien Yu ^a   Su, Pin ^a   Chuang, Ching Te ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Fin shaped field effect transistor (FinFET); static noise margin (SNM); subthreshold static random access memory (SRAM); variability

Indexed keywords

4-T CELL; 4T SRAM; 6T-CELL; BIT LINES; CELL STABILITY; DESIGN MARGIN; DEVICE VARIATIONS; IDEAL VALUES; MODEL BASED APPROACH; READ DISTURB; SRAM CELL; STATIC NOISE MARGIN; STATIC NOISE MARGIN (SNM); STATIC RANDOM ACCESS MEMORY; SUBTHRESHOLD; SUBTHRESHOLD OPERATION; SUBTHRESHOLD REGION; VARIABILITY; WRITE OPERATIONS;

CELLS; CYTOLOGY; FIELD EFFECT TRANSISTORS; FINS (HEAT EXCHANGE); INTEGRATED CIRCUITS;

STATIC RANDOM ACCESS STORAGE;

EID: 79952038442     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2096225     Document Type: Article

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