Sensitivity of gate-all-around nanowire MOSFETs to process variations - A comparison with multigate MOSFETs

IEEE Transactions on Electron Devices

Volumn 55, Issue 11, 2008, Pages 3042-3047

  Wu, Yu Sheng ^a   Su, Pin ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

FinFET; Gate all around (GAA); Multigate MOSFETs; Nanowire (NW); Trigate variation

Indexed keywords

DISPERSION (WAVES); GALLIUM ALLOYS; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; POISSON EQUATION;

ANALYTICAL SOLUTIONS; CHANNEL THICKNESSES; DEVICE SIMULATIONS; DOMINANT FACTORS; DOPANT NUMBERS; DOPED CHANNELS; DOPED DEVICES; FINFET; GATE-ALL-AROUND (GAA); MOS FETS; MULTIGATE DEVICES; MULTIGATE MOSFETS; PROCESS VARIATIONS; PROCESS-INDUCED VARIATIONS; SURROUNDING GATES; TRIGATE VARIATION; VOLUME RATIOS;

SENSITIVITY ANALYSIS;

EID: 56549111411     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2008012     Document Type: Article

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