Importance sampling monte carlo simulations for accurate estimation of SRAM yield

ESSCIRC 2008 - Proceedings of the 34th European Solid-State Circuits Conference

Volumn , Issue , 2008, Pages 230-233

  Doorn, T S ^a   Ter Maten, E J W ^a   Croon, J A ^a   Di Bucchianico, A ^b   Wittich, O ^b  

^a NXP SEMICONDUCTORS   (Netherlands)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; MONTE CARLO METHODS; OPTICAL RESOLVING POWER; PROBABILITY; PROBABILITY DISTRIBUTIONS; RADIOACTIVE MATERIALS; RAILROAD PLANT AND STRUCTURES; SAMPLING;

ACCURATE ESTIMATIONS; BIT LINES; FAILURE PROBABILITIES; IMPORTANCE SAMPLINGS; MONTE CARLO SIMULATIONS; SRAM CELLS; STATIC NOISE MARGINS; STATISTICAL SIMULATIONS; STATISTICAL TECHNIQUES;

STATIC RANDOM ACCESS STORAGE;

EID: 58049120007     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSCIRC.2008.4681834     Document Type: Conference Paper

References (4)

1. B.H. Calhoun, A.P. Chandrakasan, "Static Noise Margin Variation for sub-threshold SRAM in 65-nm CMOS", IEEE Journal of solid-state circuits, vol. 41, no. 7, pp. 1673-1679, July 2006
2. H. Onoda et al., "0.7V SRAM technology with stress-enhanced dopant segregated Schottky (DSS) source/drain transistors for 32 nm node", Symp. on VLSI Technology digest of technical papers, pp. 76-77, 2007
3. R. Kanj, R. Joshi, S. Nassif, "Mixture importance sampling and its application to the analysis of SRAM designs in the presence of rare failure events," Design Automation Conference, pp. 69-72, July 2006.
4. E. Seevinck, F.J. List, J. Lohstroh, "Static Noise Margin Analysis of MOS SRAM cells", IEEE Journal of solid state circuits, vol. 22, no. 5, pp. 748-754, October 1987.