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Volumn 15, Issue 8, 2013, Pages 2660-2664

Photoelectric probing of the interfacial trap density-of-states in ZnO nanowire field-effect transistors

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Indexed keywords


EID: 84873293596     PISSN: 14639076     EISSN: None     Source Type: Journal    
DOI: 10.1039/c3cp44027c     Document Type: Article
Times cited : (13)

References (38)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.