Visible light response of unintentionally doped ZnO nanowire field effect transistors

Journal of Physical Chemistry C

Volumn 113, Issue 38, 2009, Pages 16796-16801

  Liu, Yang ^a   Zhang, Zhiyong ^a   Xu, Huilong ^a   Zhang, Lihuan ^a   Wang, Zhenxing ^a   Li, Wenliang ^a   Ding, Li ^a   Hu, Youfan ^a   Gao, Min ^a   Li, Quan ^b   Peng, Lian Mao ^a  

^a PEKING UNIVERSITY   (China)

^b CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; DESORPTION MECHANISM; DOPED ZNO; GAS ATMOSPHERE; ILLUMINATION SOURCES; NANOWIRE SURFACE; OXYGEN MOLECULE; PHOTORESPONSES; VISIBLE-LIGHT RESPONSE; WHITE-LIGHT ILLUMINATION; ZNO;

CARRIER CONCENTRATION; DESORPTION; MESFET DEVICES; NANOWIRES; OXYGEN; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

FIELD EFFECT TRANSISTORS;

EID: 70349878452     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp9046038     Document Type: Article

References (25)

1. Özgür, Ü .; Alivov, Y. I.; Liu, C.; Teke, A.; Reshchikov, M. A.; Doǎn, S.; Avrutin, V.; Cho, S.-J.; Morkoç, H. J. Appl. Phys. 2005, 98, 041301.
2. Wang, Z. L. J. Phys.: Condens. Matter 2004, 16, R829.
3. Djurisic, A. B.; Leung, Y. H. Small 2006, 2, 944.
4. Chang, P.-C.; Lu, J. G. IEEE Trans. Electron Devices 2008, 55, 2977.
5. Wang, Z. L.; Song, J. Science 2006, 312, 242.
6. Bao, J.; Zimmler, M. A.; Capasso, F.; Wang, X.; Ren, Z. F. Nano Lett. 2006, 6, 1719.
7. Kind, H.; Yan, H.; Messer, B.; Law, M.; Yang, P. Adv. Mater. 2002, 14, 158.
8. Soci, C.; Zhang, A.; Xiang, B.; Dayeh, S. A.; Aplin, D. P. R.; Park, J.; Bao, X. Y.; Lo, Y. H.; Wang, D. Nano Lett. 2007, 7, 1003.
9. Huang, M. H.; Mao, S.; Feick, H.; Yan, H.; Wu, Y.; Kind, H.; Weber, E.; Russo, R.; Yang, P. Science 2001, 292, 1897.
10. Fan, Z.; Wang, D.; Chang, P.-C.; Tseng, W.-Y.; Lu, J. G. Appl. Phys. Lett. 2004, 85, 5923.
11. Leschkies, K. S.; Divakar, R.; Basu, J.; Enache-Pommer, E.; Boercker, J. E.; Carter, C. B.; Kortshagen, U. R.; Norris, D. J.; Aydil, E. S. Nano Lett. 2007, 7, 1793.
12. Lin, D.; Wu, H.; Pan, W. Adv. Mater. 2007, 19, 3968.
13. Kouklin, N. Adv. Mater. 2008, 20, 2190.
14. Keem, K.; Kim, H.; Kim, G.-T.; Lee, J. S.; Min, B.; Cho, K.; Sung, M.-Y.; Kim, S. Appl. Phys. Lett. 2004, 84, 4376.
15. Fan, Z.; Chang, P.-C.; Lu, J. G.; Walter, E. C.; Penner, R. M.; Lin, C.-H.; Lee, H. P. Appl. Phys. Lett. 2004, 85, 6128.
16. Moazzami, K.; Murphy, T. E.; Phillips, J. D.; Cheung, M. C.-K.; Cartwright, A. N. Semicond. Sci. Technol. 2006, 21, 717.
17. Li, Q. H.; Gao, T.; Wang, Y. G.; Wang, T. H. Appl. Phys. Lett. 2005, 86, 123117.
18. Kim, W.; Chu, K. S. Phys. Status Solidi A 2009, 206, 179.
19. Chang, P.-C.; Fan, Z.; Chien, C.-J.; Stichtenoth, D.; Ronning, C.; Lu, J. G. Appl. Phys. Lett. 2006, 89, 133113.
20. Song, S.; Hong, W.-K.; Kwon, S.-S.; Lee, T. Appl. Phys. Lett. 2008, 92, 263109.
21. Hu, Y. F.; Liu, Y. ; Li, W. L.; Gao, M.; Liang, X. L. ; Li, Q.; Peng, L.-M. Adv. Func. Mater. 2009, in press.
22. Kim, W.; Javey, A.; Vermesh, O.; Wang, Q.; Li, Y.; Dai, H. Nano Lett. 2003, 3, 193.
23. Javey, A.; Wang, Q.; Kim, W.; Dai, H. Tech. Dig. IEEE Int. Electron Devices Meet. 2003, 741.
24. Henrich, V. E.; Cox, P. A. The Surface Science of Metal Oxides; Cambridge University Press: New York, 1994, pp 148, 298.
25. Watanabe, H.; Wada, M.; Takahashi, T. Jpn. J. Appl. Phys. 1965, 4, 945.