SCOPUS 정보 검색 플랫폼

Volumn 97, Issue 8, 2010, Pages

Density of trap states measured by photon probe into ZnO based thin-film transistors

(8) Lee, Kimoon a Ko, Gunwoo a Lee, Gun Hwan b Han, Gi Bok c Sung, Myung M c Ha, Tae Woo a Kim, Jae Hoon a Im, Seongil a

a Yonsei University (South Korea)

b Korea Institute of Material Science (South Korea)

c Hanyang University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAP; DEEP LEVEL; DENSITY OF TRAP STATE; ENERGETIC PHOTONS; ENERGY LEVEL; FREE CHARGE; PROBE ENERGY; SOURCE/DRAIN ELECTRODES; STATE INFORMATION; ZNO;

GATE DIELECTRICS; MULTIPHOTON PROCESSES; PHOTONS; PROBES; SEMICONDUCTING ORGANIC COMPOUNDS; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 77956215863 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3483763 Document Type: Article

Times cited : (34)

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