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Volumn 95, Issue 20, 2009, Pages

Effects of the alkyl chain length in phosphonic acid self-assembled monolayer gate dielectrics on the performance and stability of low-voltage organic thin-film transistors

(7) Fukuda, Kenjiro a Hamamoto, Takanori a Yokota, Tomoyuki a Sekitani, Tsuyoshi a Zschieschang, Ute b Klauk, Hagen b Someya, Takao a

a UNIVERSITY OF TOKYO (Japan)

b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALKYL CHAIN LENGTHS; BIAS STRESS; CARBON ATOMS; ELECTRICAL PERFORMANCE; LOW-VOLTAGE; ON/OFF CURRENT RATIO; ORGANIC THIN FILM TRANSISTORS; PENTACENES; PHOSPHONIC ACIDS; POLYMER GATE DIELECTRICS;

ALKYLATION; CHAIN LENGTH; DIELECTRIC MATERIALS; DRAIN CURRENT; ELECTRON ENERGY LEVELS; GATES (TRANSISTOR); MOS CAPACITORS; ORGANIC ACIDS; ORGANIC POLYMERS; SELF ASSEMBLED MONOLAYERS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS;

GATE DIELECTRICS;

EID: 70450267618 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3259816 Document Type: Article

Times cited : (122)

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