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Journal of the Electrochemical Society

Volumn 156, Issue 8, 2009, Pages

Effect of Cu, CuO, and Cu-CuO bilayer source/drain electrodes on the performance of the pentacene thin-film transistor

(5) Yun, Dong Jin a Lim, Sang Hoon a Cho, Seung Hwan b Kim, Bo Sung b Rhee, Shi Woo a

a Pohang University of Science and Technology (POSTECH) (South Korea)

b SAMSUNG Electronics (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; BI-LAYER; BI-LAYER FILMS; CU FILMS; EDGE EFFECT; ELECTRODE PATTERN; FILM-FORMING SPECIES; GAS-FLOW RATIO; HIGHEST OCCUPIED MOLECULAR ORBITAL ENERGY LEVELS; HOLE INJECTION; MICRO GAPS; PENTACENE; PENTACENE THIN-FILM TRANSISTORS; RADIO FREQUENCY SPUTTERING; SEMICONDUCTOR LAYERS; SHADOW MASK; SOURCE/DRAIN ELECTRODES;

AERODYNAMICS; COPPER OXIDES; ELECTRODES; ELECTRON ENERGY LEVELS; FLOW OF GASES; GAS PERMEABLE MEMBRANES; MOLECULAR ORBITALS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

COPPER;

EID: 67650577068 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3147264 Document Type: Article

Times cited : (16)

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