High-field-effect-mobility pentacene thin-film transistors with polymethylmetacrylate buffer layer

Applied Physics Letters

Volumn 86, Issue 20, 2005, Pages 1-3

  De Angelis, F ^a   Cipolloni, S ^a   Mariucci, L ^a   Fortunato, G ^a  

^a IFN CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; DIELECTRIC DEVICES; ELECTRON MOBILITY; HYSTERESIS; OHMIC CONTACTS; POLYAMIDES; POLYMETHYL METHACRYLATES; SILANES; SILICON WAFERS; TRANSCONDUCTANCE;

HIGH-FIELD-EFFECT-MOBILITY; OCTADECYLTRICHLOROSILANE (OTS); ORGANIC THIN-FILM TRANSISTORS (O-TFT); PENTACENE;

THIN FILM TRANSISTORS;

EID: 20844433051     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1931833     Document Type: Article

References (11)

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11. More information on PMMA properties can be found, for instance, on the website http:www.allresist.de