High Al-content AlxGa1-xN epilayers grown on Si substrate by plasma-assisted molecular beam epitaxy

Journal of Alloys and Compounds

Volumn 487, Issue 1-2, 2009, Pages 24-27

  Hussein, A SH ^a   Thahab, S M ^a   Hassan, Z ^a   Chin, C W ^a   Abu Hassan, H ^a   Ng, S S ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

Author keywords

AlxGa1 xN; EDS line analysis; SEM; Vegard's law; XRD

Indexed keywords

ALXGA1-XN; EDS LINE ANALYSIS; SEM; VEGARD'S LAW; XRD;

ALUMINUM; CRYSTAL GROWTH; ELECTRON DIFFRACTION; EMISSION SPECTROSCOPY; GALLIUM NITRIDE; HIGH RESOLUTION ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTICAL PROPERTIES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SILICON; SUBSTRATES; X RAY DIFFRACTION; X RAY SPECTROSCOPY;

X RAY DIFFRACTION ANALYSIS;

EID: 70350620455     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.07.185     Document Type: Article

References (13)

1. Khan M.A., Chen Q., Yang J.W., Shur M.S., Dermott B.T., and Higgins J.A. Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors. IEEE Electr. Dev. Lett. 17 (1996) 325-327
2. Wu Y.F., Keller B.P., Fini P., Keller S., Jenkins T.J., Kehias L.T., DenBaars S.P., and Mishra U.K. High Al-content AlGaN/GaN MODFETs for ultrahigh performance. IEEE Electr. Dev. Lett. 19 (1998) 50-53
3. Chen Q., Yang J.W., Blasingame M., Faber C., Ping A.T., and Adesida I. Microwave electronics device applications of AlGaN:GaN heterostructures. Mater. Sci. Eng. B 59 (1999) 395-400
4. Zolpor J.C. IEDM Tech. Dig. (1999) 389
5. Ambacher O., Smart J., Shealy J.R., Weimann N.G., Chu K., and Murphy M. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures. J. Appl. Phys. 85 (1999) 3222-3233
6. Bykhovski A., Gelmont B., and Shur M.S. Jpn. J. Appl. Phys. 74 (1993) 6734
7. Chen W.S., Chang S.J., Su Y.K., Wang R.L., Kuo C.H., and Shei S.C. AlxGa1-xN/GaN heterostructure field effect transistors various Al mole fraction in AlGaN barrier. J. Cryst. Growth 275 (2005) 398-403
8. Chin C.W., Hassan Z., and Yam F.K. Highly Mg-doped GaN thin film grown by RF plasma assisted molecular beam epitaxy. Optoelectron. Adv. Mater. 2 (2008) 533-537
9. Vegard L. Die Konstitution der Mischkristalle und die Raumfüllung der Atome. Z. Phys. 5 (1921) 17-26
10. Walle C.G.V.D., McCluskey M.D., Master C.P., Romano L.T., and Johnson N.M. Large and composition-dependent band gap bowing in InxGa1-xN alloys. Mater. Sci. Eng. B 59 (1999) 274-278
11. Calleja E., Sanchez-Garcia M.A., Sanchez F.J., Calle F., Naranjo F.B., Munoz E., Molina S.I., sanchez A.M., Pacheco F.J., and Garcia R. Growth of III-nitride on Si(1 1 1) by molecular beam epitaxy doping, optical and electrical properties. J. Cryst. Growth 201/202 (1999) 296-317
12. 1-xN/AIN buffer layer on the properties of GaN/Si(1 1 1) film grown by NH3-MBE. J. Cryst. Growth 280 (2005) 346-351
13. Han J., Waldrip K.E., Lee S.R., Figiel J.J., Hearne S.J., Petersen G.A., and Myers S.M. Control and elimination of cracking of AlGaN using low-temperature AlGaN interlayers. Appl. Phys. Lett. 78 (2001) 67