The growth of III-V nitrides heterostructure on Si substrate by plasma-assisted molecular beam epitaxy

Journal of Alloys and Compounds

Volumn 506, Issue 1, 2010, Pages 343-346

  Beh, K P ^a   Yam, F K ^a   Chin, C W ^a   Tneh, S S ^a   Hassan, Z ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

Author keywords

High work function metal contacts; InGaN; PL; SEM; XRD

Indexed keywords

HIGH-WORK-FUNCTION METAL; INGAN; PL; SEM; XRD;

ANNEALING; EPITAXIAL GROWTH; GOLD COATINGS; INDIUM; IRIDIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NITRIDES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; WORK FUNCTION; X RAY DIFFRACTION;

METALS;

EID: 77956094185     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.06.204     Document Type: Article

References (28)

1. J. Senawiratne, A. Chatterjee, T. DetchProhm, W. Zhao, Y. Li, M. Zhu, Y. Xia, X. Li, J. Plawsky, and C. Wetzel Thin Solid Film 518 2010 1732 1736
2. H. Sakai, T. Koide, H. Suzuki, M. Yamaguchi, S. Yamasaki, M. Koike, H. Amano, and I. Akasaki Jpn. J. Appl. Phys. 34 1995 1429 1431
3. P. Laukkanen, S. Lehkonen, P. Usimaa, M. Pessa, A. Sepala, T. Ahlgren, and E. Rauhala J. Cryst. Growth 230 2001 503 506
4. S. Dalmasso, B. Damilano, N. Grandjean, J. Massies, M. Leroux, J.-L. Reverchon, and J.-Y. Duboz Mater. Sci. Eng. B82 2001 256 258
5. S. Gradeak, F. Qian, Y. Li, H.-G. Park, and C.M. Lieber Appl. Phys. Lett. 87 2005 173111
6. C. Xiong, F. Jiang, W. Fang, L. Wang, C. Mo, and H. Liu J. Lumin. 122-123 2007 185 187
7. J. Liu, W.S. Tam, H. Wong, and V. Filip Microelectron. Reliab. 49 2009 38 41
8. Y. Kamii, I. Waki, H. Fujioka, M. Oshimaa, H. Miki, and M. Okuyama Appl. Surf. Sci. 190 2002 348 351
9. M. Kurouchi, T. Yamaguchi, H. Naoi, A. Suzuki, T. Araki, and Y. Nanishi J. Cryst. Growth 275 2005 e1053 e1058
10. N. Li, S.-J. Wang, E.-H. Park, Z.C. Feng, H.-L. Tsai, J.-R. Yang, and I. Ferguson J. Cryst. Growth 311 2009 4628 4631
11. Hironori Komaki, Teruyuki Nakamura, Ryuji Katayama, Kentaro Onabe, Masashi Ozeki, and Tetsuo Ikari J. Cryst. Growth 301-302 2007 473 477
12. Y.E. Romanyuk, D. Kreier, Y. Cui, K.M. Yu, J.W. Ager III, and S.R. Leone Thin Solid Films 517 2009 6512 6515
13. A. Ohtani, K.S. Stevens, and R. Beresford Appl. Phys. Lett. 65 1994 61 63
14. E. Calleja, M.A. Sanchez-Garcia, F.J. Sanchez, F. Calle, F.B. Naranjo, E. Munoz, S.I. Molina, A.M. Sanchez, F.J. Pacheco, and R. Garcia J. Cryst. Growth 201/202 1999 296 317
15. T.L. Tansley, E.M. Goldys, M. Godlewski, B. Zhou, and H.Y. Zuo The contribution of defects to the electrical and optical properties of GaN S.J. Pearton, GaN and Related Materials I 1997 Gordon and Breach Science Publishers
16. J.W. Yang, C.J. Sun, Q. Chen, M.Z. Anwar, M. Asif Khan, S.A. Nikishin, G.A. Seryogin, A.V. Osinsky, L. Chernyak, H. Temkin, Chimin Hu, and S. Mahajan Appl. Phys. Lett. 69 1996 3566 3568
17. J. Ristic, M.A. Sanchez-Garcia, E. Calleja, A. Perez-Rodriguez, C. Serre, A. Romano-Rodriguez, J.R. Morante, V.R. Koegler, and W. Skorupa Mater. Sci. Eng. B93 2002 172 176
18. W. Ju, D.A. Gulino, and R. Higgins J. Cryst. Growth 263 2004 30 34
19. T. Lei, M. Fanciulli, R.J. Molna, T.D. Moustakas, R.J. Graham, and J. Scanlon Appl. Phys. Lett. 59 1991 944 946
20. F.K. Yam, and Z. Hassan Superlattices Microstruct. 43 2008 1 23
21. I. Ho, and G.B. Stringfellow Appl. Phys. Lett. 69 1996 2701 2703
22. T. Nagatomo, T. Kuboyama, H. Minamino, and O. Omoto Jpn. J. Appl. Phys. 28 1989 1334 1336
23. Yoshihiro Kangawa, Tomonori Ito, Yoshinao Kumagai, and Akinori Koukitu Appl. Surf. Sci. 216 2003 453 457
24. G.B. Stringfellow J. Cryst. Growth 312 2010 735 749
25. M.A.L. Johnson, W.C. Hughes, W.H. Rowland Jr., J.W. Cook Jr., J.F. Schetzina, M. Leonard, H.S. Kong, J.A. Edmond, and J. Zavada J. Cryst. Growth 175/176 1997 72 78
26. G. Popovici, and H. Morkoc Growth and doping of defects in III-nitrides S.J. Pearton, GaN and Related Materials II 2000 Gordon and Breach Science Publisher Chapter 3
27. V. Bougrov, M. Levinshtein, S. Rumyantsev, and A. Zubrilov Gallium nitride (GaN) M.E. Levinshtein, S.L. Rumyantsev, M.S. Shur, Properties of Advanced Semiconductor Materials, GaN, AIN, InN, BN, SiC, SiGe 2001 John Wiley & Sons, Inc. Chapter 1
28. L.F. Voss, L. Stanfford, B.P. Gila, S.J. Pearton, and F. Ren Appl. Surf. Sci. 254 2008 4134 4138