On the origin of the 1.5 μm luminescence in ion beam synthesized β-FeSi2

Applied Physics Letters

Volumn 68, Issue 12, 1996, Pages 1649-1650

  Leong, D N ^a   Harry, M A ^a   Reeson, K J ^a   Homewood, K P ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ENERGY GAP; HIGH TEMPERATURE OPERATIONS; ION BEAMS; ION IMPLANTATION; PHOTOLUMINESCENCE; SILICON WAFERS; SYNTHESIS (CHEMICAL);

BAND EDGE; BAND GAP EXCITATION ENERGY; FRESNEL LOSSES; ION BEAM SYNTHESIS; IRON DISILICIDE; OSTWALD RIPENING; SILICON FILTER;

IRON ALLOYS;

EID: 0030110156     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115893     Document Type: Article

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