Growth of β-FeSi2 thin film on Si (111) by metal-organic chemical vapor deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 5 A, 2001, Pages

  Akiyama, Kensuke ^a   Ohya, Seishiro ^a   Takano, Hiromichi ^b   Kieda, Nobuo ^c   Funakubo, Hiroshi ^d  

^a KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

^b Kanagawa High Technology Foundation   (Japan)

^c SHONAN INSTITUTE OF TECHNOLOGY   (Japan)

^d TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Epitaxial film; MOCVD; FeSi2

Indexed keywords

CARBON; EPITAXIAL GROWTH; IRON COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; X RAY PHOTOELECTRON SPECTROSCOPY;

EPITAXIAL FILMS;

THIN FILMS;

EID: 0035329154     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l460     Document Type: Article

References (12)