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Japanese Journal of Applied Physics

Volumn 47, Issue 5 PART 1, 2008, Pages 3444-3446

Low-temperature annealing of n-type β-FeSi2/p-type si heterojunctions

(4) Shaban, Mahmoud a Nomoto, Keita a Nakashima, Kazuhiro a Yoshitake, Tsuyoshi a

a KYUSHU UNIVERSITY (Japan)

Author keywords

Annealing; Heterojunction; Iron disilicide; Photovoltaics; Thin film

Indexed keywords

HETEROJUNCTIONS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; THICK FILMS; THIN FILMS;

ANNEALING TEMPERATURES; EPITAXIALLY GROWN; FE ATOMS; FILM DEPOSITIONS; IN VACUUMS; PHOTOVOLTAIC PERFORMANCES; PHOTOVOLTAIC PROPERTIES; PHOTOVOLTAICS; POSTANNEALING; POSTANNEALING PROCESSES; SI HETEROJUNCTIONS; SI SUBSTRATES; SI(111);

ANNEALING;

EID: 55049142417 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.47.3444 Document Type: Article

Times cited : (25)

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