SCOPUS 정보 검색 플랫폼

Volumn 5, Issue 3, 2013, Pages 1116-1120

Modification of electronic properties of top-gated graphene devices by ultrathin yttrium-oxide dielectric layers

(11) Wang, Lin a Chen, Xiaolong a Wang, Yang a Wu, Zefei a Li, Wei a Han, Yu a Zhang, Mingwei a He, Yuheng a Zhu, Chao a Fung, Kwok Kwong a Wang, Ning a

a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMANN TRANSPORT THEORY; CHARGED IMPURITY; COULOMB SCATTERING; CRYOGENIC TEMPERATURES; DIELECTRIC LAYER; GRAPHENE DEVICES; INHOMOGENEITIES; LANDAU LEVELS; SINGLE LAYER; STRUCTURE CHARACTERIZATION; ULTRA-THIN;

CAPACITANCE MEASUREMENT; FIELD EFFECT TRANSISTORS; GRAPHENE; STATISTICAL MECHANICS; YTTRIUM; YTTRIUM OXIDE;

ELECTRONIC PROPERTIES;

GRAPHITE; NANOMATERIAL; YTTRIA; YTTRIUM;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; CONDUCTOMETRY; ELECTRIC CONDUCTIVITY; ELECTROMAGNETIC FIELD; EQUIPMENT; EQUIPMENT DESIGN; EQUIPMENT FAILURE; MATERIALS TESTING; PARTICLE SIZE; ULTRASTRUCTURE;

CONDUCTOMETRY; ELECTRIC CONDUCTIVITY; ELECTROMAGNETIC FIELDS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GRAPHITE; MATERIALS TESTING; MEMBRANES, ARTIFICIAL; NANOSTRUCTURES; PARTICLE SIZE; YTTRIUM;

MLCS; MLOWN;

EID: 84872736218 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c2nr33434h Document Type: Article

Times cited : (19)

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