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Applied Physics Letters

Volumn 99, Issue 3, 2011, Pages

Modifying electronic transport properties of graphene by electron beam irradiation

(7) He, Y H a Wang, L a Chen, X L a Wu, Z F a Li, W a Cai, Y a Wang, N a

a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION PROCESS; CRYOGENIC TEMPERATURES; DOSAGE CONTROL; ELECTRON BEAM IRRADIATION; ELECTRONIC TRANSPORT PROPERTIES; HIGH QUALITY; IN-SITU; LARGE NEGATIVE MAGNETORESISTANCE; LATTICE DAMAGE; QUANTUM HALL EFFECT; SAMPLE TREATMENT; SINGLE LAYER; TEMPERATURE DEPENDENT; TRANSPORT MEASUREMENTS; VACUUM CONDITION;

ELECTRIC RESISTANCE; ELECTRON BEAMS; ELECTRON OPTICS; HALL EFFECT; IRRADIATION; QUANTUM CHEMISTRY; TRANSPORT PROPERTIES;

GRAPHENE;

EID: 79960791770 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3615294 Document Type: Article

Times cited : (33)

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