Influence of stress on structural properties of AlGaN/GaN high electron mobility transistor layers grown on 150 mm diameter Si (111) substrate

Journal of Applied Physics

Volumn 113, Issue 2, 2013, Pages

  Liu, H F ^a   Dolmanan, S B ^a   Zhang, L ^a   Chua, S J ^a   Chi, D Z ^a   Heuken, M ^b   Tripathy, S ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN; ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; ALN; HETERO-INTERFACES; HIGH RESOLUTION X RAY DIFFRACTION; HIGH TEMPERATURE; MICRO RAMAN SPECTROSCOPY; MULTI-LAYERED; NITRIDE LAYERS; SI(111) SUBSTRATE; STRESS REDISTRIBUTION; SUBSTRATE THINNING; WAFER CURVATURE;

ELECTRON GAS; GALLIUM ALLOYS; GALLIUM NITRIDE; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SILICON; SILICON WAFERS; STRESS CONCENTRATION; STRUCTURAL PROPERTIES; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84872701388     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4774288     Document Type: Article

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