Annealing behavior of N-bonding configurations in GaN 0.023As0.977 ternary alloy grown on GaAs (0 0 1) substrate by molecular beam epitaxy

Journal of Crystal Growth

Volumn 290, Issue 1, 2006, Pages 24-28

  Liu, H F ^a   Xiang, N ^a   Chua, S J ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

A1. High resolution X ray diffraction; A1. Rapid thermal annealing; A3. Molecular beam expitaxy; B1. Dilute nitrites

Indexed keywords

CHEMICAL BONDS; MOLECULAR BEAM EPITAXY; NITROGEN; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES;

DILUTE NITRITES; HIGH-RESOLUTION X-RAY DIFFRACTION; RAMAN SCATTERING INTENSITY; VIBRATION MODE;

RAPID THERMAL ANNEALING;

EID: 33645026551     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.12.114     Document Type: Article

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