GaN-on-Si technology, a new approach for advanced devices in energy and communications

2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

Volumn , Issue , 2010, Pages 52-56

  Chung, J W ^a   Ryu, K ^a   Lu, B ^a   Palacios, Tomás ^a  

^a Department of Electrical Engineering and Computer Science   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGREE OF FREEDOM; GAN LAYERS; GROWTH OF GAN; HETEROGENEOUS INTEGRATION; HIGH VOLTAGE SWITCHES; NEW APPROACHES; NEW DEVICES; NEW OPPORTUNITIES; NITRIDE-BASED DEVICES; ON CHIPS; SI DEVICES; SI SUBSTRATES; SI TECHNOLOGY; SI WAFER;

EQUIPMENT; GALLIUM NITRIDE; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; SOLID STATE DEVICES; SUBSTRATES; WET ETCHING;

GALLIUM ALLOYS;

EID: 78649960223     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2010.5617745     Document Type: Conference Paper

References (8)

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