Study of GaN HEMTs electrical degradation by means of numerical simulations

2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

Volumn , Issue , 2010, Pages 285-288

  Di Lecce, Valerio ^a   Esposto, Michele ^a   Bonaiuti, Matteo ^a   Fantini, Fausto ^a   Chini, Alessandro ^a  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; BARRIER LAYERS; DC PERFORMANCE; DC STRESS; ELECTRICAL DEGRADATION; GAN HEMTS; GATE EDGE; NUMERICAL SIMULATION; OUTPUT CONDUCTANCE; SATURATED DRAIN CURRENTS; STATIC CHARACTERISTIC; STRESS TEST; TRAP CONCENTRATION; TRAPPING REGIONS; VARIATION OF PARAMETERS;

COMPUTER SIMULATION; DEGRADATION; DRAIN CURRENT; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; MATHEMATICAL MODELS; SOLID STATE DEVICES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 78649949054     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2010.5618358     Document Type: Conference Paper

References (10)

1. M. Faqir, G. Verzellesi, G. Meneghesso, E. Zanoni, and F. Fantini, "Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs", IEEE Trans. Electron Devices, Vol. 55, No. 7, Jul. 2008, pp. 1592-1602.
2. M. Faqir, G. Verzellesi, A. Chini, F. Fantini, F. Danesin, G. Meneghesso, E. Zanoni, and C. Dua, "Mechanisms of RF Current Collapse in AlGaN-GaN High Electron Mobility Transistors", IEEE Trans. Device Mater. Rel., Vol. 8, No. 2, Jun. 2008, pp. 240-247.
3. U. K. Mishra, L. Shen, T. E. Kazior, and Y.-F. Wu, "GaN-based RF Power Devices and Amplifiers", Proc. IEEE, Vol. 96, No. 2, Feb. 2008, pp. 287-305.
4. J. Joh and J. A. del Alamo, "Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors", IEEE Electron Device Lett., Vol. 29, No. 4, Apr. 2008, pp. 287-289.
5. J. Joh, L. Xia, and J. A. del Alamo, "Gate Current Degradation Mechanisms of GaN High-Electron Mobility Transistors, " in IEDM Tech. Dig., 2007, pp. 385-388.
6. J. Joh and J. A. del Alamo, "Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors", in IEDM Tech. Dig., 2006, pp. 415-418.
7. A. Chini, V. Di Lecce, M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Lett., Vol. 30, No. 10, Oct. 2009, pp. 1021-1023.
8. E. Zanoni, F. Danesin, M. Meneghini, A.Cetronio, C. Lanzieri, M. Peroni, and G. Meneghesso, "Localized Damage in AlGaN-GaN HEMTs Induced by Reverse-Bias Testing", IEEE Electron Device Lett., Vol. 30, No. 5, May 2009, pp. 427-429.
9. A. Chini, M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed, I-V, leakage and DLTS measurements", IET Electronics Lett., Vol. 45, No. 8, pp. 426-427, Apr. 2009.
10. Y. Awano, K. Tomizawa, N. Hashizume, M. Kawashima, "Monte Carlo Particle Simulation of a GaAs Short-Channel MESFET", IET Electronics Lett., Vol. 19, No. 1, Jan 1983, pp. 20-21.