Aqueous stability of Ga- and N-polar gallium nitride

Langmuir

Volumn 29, Issue 1, 2013, Pages 216-220

  Foster, Corey M ^a   Collazo, Ramon ^a   Sitar, Zlatko ^a   Ivanisevic, Albena ^a,b  

^a North Carolina State University   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-STABILITY; AQUEOUS STABILITY; FUNCTIONALIZATIONS; III-NITRIDE SEMICONDUCTORS; N-POLAR; NEUTRAL SOLUTION; POLAR SURFACES; SENSING PLATFORMS; SOLUTION CONDITIONS; SURFACE PASSIVATION;

ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA MASS SPECTROMETRY; INTERFACES (MATERIALS); LEACHING; PHOTOELECTRONS; X RAY PHOTOELECTRON SPECTROSCOPY;

STABILITY;

GALLIUM; GALLIUM NITRIDE; WATER;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMISTRY; DRUG STABILITY; SEMICONDUCTOR; X RAY PHOTOELECTRON SPECTROSCOPY;

DRUG STABILITY; GALLIUM; MICROSCOPY, ATOMIC FORCE; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTORS; WATER;

EID: 84872120246     PISSN: 07437463     EISSN: 15205827     Source Type: Journal    
DOI: 10.1021/la304039n     Document Type: Article

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