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Journal of the Electrochemical Society

Volumn 159, Issue 2, 2012, Pages

Chemical etch characteristics of N-Face and Ga-Face GaN by phosphoric acid and potassium hydroxide solutions

(7) Jung, Younghun a Ahn, Jaehui a Baik, Kwang Hyeon b Kim, Donghwan a Pearton, Stephen J c Ren, Fan c Kim, Jihyun a

a Korea University (South Korea)

b Korea Electronic Technology Institute (KETI) (South Korea)

c J Crayton Pruitt Family Department of Biomedical Engineering (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ETCH; CHEMICAL ETCHING; ETCHED SURFACE; ETCHING METHOD; ETCHING TECHNIQUE; HEXAGONAL PYRAMIDS; KOH SOLUTION; LIGHT-EXTRACTION EFFICIENCY; LOW CONCENTRATIONS; PHOTOLUMINESCENCE INTENSITIES; POTASSIUM HYDROXIDE SOLUTION; ROUGHENED SURFACES;

DEIONIZED WATER; GALLIUM NITRIDE; LIGHT EMITTING DIODES; PHOSPHORIC ACID; PLASMA ETCHING; POTASSIUM;

POTASSIUM HYDROXIDE;

EID: 84855334372 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/2.039202jes Document Type: Article

Times cited : (65)

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