Polarity control of GaN films grown by metal organic chemical vapor deposition on (0001) sapphire substrates

Materials Research Society Symposium Proceedings

Volumn 831, Issue , 2005, Pages 167-172

  Mita, Seiji ^a   Collazo, Ramon ^a   Schlesser, Raoul ^a   Sitar, Zlatko ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POTASSIUM COMPOUNDS; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SOLUTIONS; SUBSTRATES; SURFACE ROUGHNESS;

BILAYERS; NITRIDATION; POLARITY CONTROL; SAPPHIRE SUBSTRATES;

FILM GROWTH;

EID: 23844487404     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. M. Sumiya and S. Fuke, MRS Internet J. Nitride Semicond. Res. 9, 1 (2004).
2. J. L. Weyher, S. Müller, I. Grzegory and S. Porowski, J. Cryst. Growth 182, 17 (1997).
3. F. Wu, M. D. Craven, S. H. Lim and J. S. Speck, J. Appl. Phys. 94, 942 (2003).
4. O. Ambacher, H. Angerer, R. Dimitrov, W. Rieger, M. Stutzmann, G. Dollinger and A. Bermaier, phys. stat. sol. (a) 159, 105 (1997).
5. C. B. Vartuli, S. J. Peaton, C. R. Abernathy, J. D. MacKenzie and F. Ren, sol.-stat. electro. 41, 1947 (1997).
6. R. DiFelice and J. E. Northup, Appl. Phys. Lett. 73, 936 (1998).
7. M. Mayumi, F. Satoh, Y. Kumagai, K. Takemoto and A. Koukiku, Jpn. J. Appl. Phys. 39, L707 (2000).