Polarity control of LP-MOVPE GaN using N2 as the carrier gas

Materials Research Society Symposium Proceedings

Volumn 892, Issue , 2006, Pages 685-690

  Mita, Seiji ^a   Collazo, Ramon ^a   Schlesser, Raoul ^a   Sitar, Zlatko ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; FILM GROWTH; GALLIUM NITRIDE; REFLECTION; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS;

BUFFER LAYERS; CARRIER GAS; POLARITY; SKEW SYMMETRIC REFLECTION;

SEMICONDUCTING FILMS;

EID: 33646390958     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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