Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition

Journal of Applied Physics

Volumn 102, Issue 8, 2007, Pages

  Keller, S ^a   Fichtenbaum, N A ^a   Wu, F ^a   Brown, D ^a   Rosales, A ^a   Denbaars, S P ^a   Speck, J S ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A3. METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); HIGH RESOLUTION X RAY DIFFRACTION; HIGH TEMPERATURE; MISORIENTATION ANGLE; PHOTOLUMINESCENCE MEASUREMENTS; SAPPHIRE SUBSTRATES; STRUCTURAL AND OPTICAL PROPERTIES; SUBSTRATE MISORIENTATION;

ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; TRANSMISSION ELECTRON MICROSCOPY; VAPORS; X RAY DIFFRACTION;

SUBSTRATES;

EID: 39349111174     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2801406     Document Type: Article

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