Rapid microwave annealing of amorphous lead zirconate titanate thin films deposited by sol-gel method on la NiO 3/ SiO 2/ Si substrates

Journal of the American Ceramic Society

Volumn 96, Issue 1, 2013, Pages 90-95

  Chen, Y N ^a   Wang, Z J ^a  

^a INSTITUTE OF METAL RESEARCH   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; CRYSTALLINE PHASIS; ELEVATED TEMPERATURE; LEAD ZIRCONATE TITANATE THIN FILMS; METAL OXIDES; MICROWAVE ANNEALING; MICROWAVE MAGNETIC FIELD; PREFERRED ORIENTATIONS; PZT; PZT FILM; PZT THIN FILM; RAPID MICROWAVE ANNEALING; SI SUBSTRATES; TOTAL PROCESSING TIME;

AMORPHOUS FILMS; DEPOSITS; ELECTRIC PROPERTIES; LEAD; MAGNETIC FIELDS; METALLIC COMPOUNDS; MICROWAVE HEATING; PEROVSKITE; SEMICONDUCTING LEAD COMPOUNDS; SILICON; SOL-GEL PROCESS; SUBSTRATES; THIN FILMS; ZIRCONIUM;

AMORPHOUS SILICON;

EID: 84872111913     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/jace.12066     Document Type: Article

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