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Volumn 48, Issue 9 Part 2, 2009, Pages

Electrical properties and microstructure of low-temperature-crystallized lead zirconate titanate thin films prepared by 2.45 GHz microwave irradiation

(4) Wang, Zhan Jie a Otsuka, Yuka b Cao, Zhiping b Kokawa, Hiroyuki b

a INSTITUTE OF METAL RESEARCH (China)

b TOHOKU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COERCIVE FIELD; CRYSTALLINE PHASIS; DIELECTRIC CONSTANTS; ELECTRICAL PROPERTIES AND MICROSTRUCTURE; ELECTRICAL PROPERTY; FINE GRAINS; LEAD ZIRCONATE TITANATE THIN FILMS; LOW TEMPERATURES; MATRIX; PEROVSKITE PHASE; PZT FILM; PZT THIN FILM; REMANENT POLARIZATION; ROSETTE STRUCTURE; SI SUBSTRATES; SOL-GEL METHODS; TEM;

GELS; IRRADIATION; MAGNETIC FIELDS; MICROSTRUCTURE; MICROWAVE IRRADIATION; OXIDE MINERALS; PEROVSKITE; PIEZOELECTRIC ACTUATORS; PIEZOELECTRIC MATERIALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING LEAD COMPOUNDS; SOL-GEL PROCESS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

ELECTRIC PROPERTIES;

EID: 72149117536 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.48.09KA01 Document Type: Article

Times cited : (3)

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