Improved bipolar resistive switching properties in CeO2/ZnO stacked heterostructures

Semiconductor Science and Technology

Volumn 28, Issue 1, 2013, Pages

  Zhu, Yongdan ^a,b   Li, Meiya ^a   Zhou, Hai ^a   Hu, Zhongqiang ^a   Liu, Xiaolian ^a   Liao, Honghua ^b  

^a WUHAN UNIVERSITY   (China)

^b HUBEI UNIVERSITY FOR NATIONALITIES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED VOLTAGES; HIGH-RESISTANCE STATE; MULTILEVEL MEMORY; NB:SRTIO3; NON-VOLATILE; RESISTANCE STATE; RESISTIVE SWITCHING; RETENTION ABILITY; SPACE CHARGE LIMITED CONDUCTION; TRAPPING CENTERS; ZNO; ZNO FILMS;

HETEROJUNCTIONS; INTERFACES (MATERIALS); PULSED LASER DEPOSITION; ZINC OXIDE;

SWITCHING SYSTEMS;

EID: 84872093754     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/28/1/015023     Document Type: Article

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