Flexible resistive switching memory based on Mn0.20Zn 0.80O/HfO2 bilayer structure

Journal of Physics D: Applied Physics

Volumn 44, Issue 44, 2011, Pages

  Zhou, Hai ^a   Fang, Guo Jia ^a   Zhu, Yongdan ^a   Liu, Nishuang ^a   Li, Meiya ^a   Zhao, Xing Zhong ^a  

^a WUHAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER STRUCTURE; KAPTON SUBSTRATE; ON/OFF RATIO; RESISTIVE SWITCHING; RESISTIVE SWITCHING MECHANISMS; RESISTIVE SWITCHING MEMORIES; REVERSE BIAS; SWITCHING PROPERTIES;

HAFNIUM OXIDES; MANGANESE; OXYGEN VACANCIES; POLYIMIDES; SUBSTRATES; SWITCHING SYSTEMS; ZINC;

SWITCHING;

EID: 80055064688     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/44/445101     Document Type: Article

References (21)

1. Yan Z, Guo Y, Zhang G and Liu J M 2011 Adv. Mater. 23 1351-5
2. Song S, Cho B, Kim T W, Ji Y, Jo M, Wang G, Choe M, Kahng Y H, Hwang H and Lee T 2010 Adv. Mater. 22 5048-52
3. Jeong H Y, Kim J Y, Kim J W, Hwang J O, Kim J E, Lee J Y, Yoon T H, Cho B J, Kim S O, Ruoff R S and Choi S Y 2010 Nano Lett. 10 4381-6
4. Cheng C H, Yeh F S and Chin A 2010 Adv. Mater. 23 902-5
5. Hong S K, Kim J E, Kim S O, Choi S Y and Cho B J 2010 IEEE Electron Device Lett. 31 1005-7
6. Peng H and Wu T 2009 Appl. Phys. Lett. 95 152106
7. Peng H Y, Li G P, Ye J Y, Wei Z P, Zhang Z, Wang D D, Xing G Z and Wua T 2010 Appl. Phys. Lett. 96 192113
8. Sawa A, Fujii T, Kawasaki M and Tokura Y 2004 Appl. Phys. Lett. 85 4073
9. Fujimoto M, Koyama H, Konagai M, Hosoi Y, Ishihara K, Ohnishi S and Awaya N 2006 Appl. Phys. Lett. 89 223509
10. Rozenberg M J, Inoue I H and Sanchez M J 2004 Phys. Rev. Lett. 92 178302
11. Gergel-Hackett N, Hamadani B, Dunlap B, Suehle J, Richter C, Hacker C and Gundlach D 2009 IEEE Electron Device Lett. 30 706-8
12. Xu N, Liu L F, Sun X, Liu X Y, Han D D, Wang Y, Han R Q, Kang J F and Yu B 2008 Appl. Phys. Lett. 92 232112
13. Chang W Y, Lai Y C, Wu T B, Wang S F, Chen F and Tsai M J 2008 Appl. Phys. Lett. 92 022110
14. Yang Y C, Pan F, Liu Q, Liu M and Zeng F 2009 Nano Lett. 9 1636
15. Yang Y C, Pan F and Zeng F 2010 New J. Phys. 12 023008
16. Hsieh P T, Chen Y C, Kao K S and Wang C M 2008 Appl. Phys. A 90 317-21
17. Major S, Kumar S, Bhatnagar M and Chopra K L 1986 Appl. Phys. Lett. 49 394
18. Szörényi T, Laude L D, Bertóti I, Kntor Z and Geretovszky Z 1995 J. Appl. Phys. 78 6211
19. Lee D S, Seong D J, Choi H J, Jo I H, Dong R, Xiang W F, Oh S J, Heo S H, Jo M S, Hwang D K, Park H K, Chang M, Hasan M and Hwang H S 2006 Technical Digest - Int. Electron Devices Meeting p 797
20. Wu S X, Xu L M, Xing X J, Chen S M, Yuan Y B, Liu Y J, Yu Y P, Li X Y and Lia S W 2008 Appl. Phys. Lett. 93 043502
21. Yang J J, Pickett M D, Li X, Ohlberg D A A, Stewart D R and Williams R S 2009 Nature Nanotechnol. 3 429