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Volumn 158, Issue 7, 2011, Pages

Interface states induced temporary resistance changing behavior in Pt/TiO2/SrTi0.993Nb0.007O3/Pt structure

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; ELECTRICAL BEHAVIORS; ELECTRICAL RESISTANCES; ELECTRICAL STIMULATIONS; ELECTRICAL TESTS; INTERFACE STATE; NEGATIVE DIFFERENTIAL RESISTANCES; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; RESISTANCE STATE; TRAPPED ELECTRONS; VOLTAGE PULSE;

EID: 79957610536     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3586241     Document Type: Article
Times cited : (8)

References (19)
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  • 3
    • 43549126477 scopus 로고    scopus 로고
    • Resistive switching in transition metal oxides
    • DOI 10.1016/S1369-7021(08)70119-6, PII S1369702108701196
    • A. Sawa, Mater. Today, 11, 28 (2008). 10.1016/S1369-7021(08)70119-6 (Pubitemid 351680723)
    • (2008) Materials Today , vol.11 , Issue.6 , pp. 28-36
    • Sawa, A.1
  • 5
    • 58149242281 scopus 로고    scopus 로고
    • 10.1063/1.3041628
    • J. Robertson, J. Appl. Phys., 104, 124111 (2008). 10.1063/1.3041628
    • (2008) J. Appl. Phys. , vol.104 , pp. 124111
    • Robertson, J.1
  • 11
    • 28044464743 scopus 로고    scopus 로고
    • 2 thin films by vacuum arc plasma evaporation
    • DOI 10.1016/j.tsf.2005.08.294, PII S0040609005014999, Proceedings of the Fourth International Symposium on Transparent Oxide Thin Film for Electronics and Optics (TOEO-4)
    • T. Miyata, S. Tsukada, and T. Minami, Thin Solid Films, 496, 136 (2006). 10.1016/j.tsf.2005.08.294 (Pubitemid 41689877)
    • (2006) Thin Solid Films , vol.496 , Issue.1 , pp. 136-140
    • Miyata, T.1    Tsukada, S.2    Minami, T.3
  • 13
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    • High speed resistive switching in PtTi O2 TiN film for nonvolatile memory application
    • DOI 10.1063/1.2818691
    • C. Yoshida, K. Tsunoda, H. Noshiro, and Y. Sugiyama, Appl. Phys. Lett., 91, 223510 (2007). 10.1063/1.2818691 (Pubitemid 350191677)
    • (2007) Applied Physics Letters , vol.91 , Issue.22 , pp. 223510
    • Yoshida, C.1    Tsunoda, K.2    Noshiro, H.3    Sugiyama, Y.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.