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Current Applied Physics

Volumn 11, Issue 2 SUPPL., 2011, Pages

Improved resistive switching properties in Pt/Pr0.7Ca 0.3MnO3/Y2O3-stabilized ZrO 2/W via-hole structures

(7) Liu, Xinjun a Biju, Kuyyadi P a Park, Sangsu a Kim, Insung a Siddik, Manzar a Sadaf, Sharif a Hwang, Hyunsang a

a Gwangju Institute of Science and Technology (GIST) (South Korea)

Author keywords

Manganites thin film; ReRAM; Resistive switching; Tunneling barrier

Indexed keywords

BOTTOM ELECTRODES; LOW-POWER CONSUMPTION; OXYGEN IONS; PULSE LASER DEPOSITION; PULSE MEASUREMENTS; RERAM; RESISTIVE SWITCHING; SUBMICRON; TUNNELING BARRIER; VIA-HOLE;

DC POWER TRANSMISSION; MANGANESE OXIDE; SWITCHING SYSTEMS; ZIRCONIA;

STRUCTURAL PROPERTIES;

EID: 79960899808 PISSN: 15671739 EISSN: None Source Type: Journal
DOI: 10.1016/j.cap.2010.11.123 Document Type: Article

Times cited : (24)

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