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Thin Solid Films

Volumn 520, Issue 11, 2012, Pages 4016-4020

Mechanisms of current conduction in Pt/BaTiO 3/Pt resistive switching cell

(6) Pan, R K a Zhang, T J a Wang, J Y a Wang, J Z a Wang, D F a,b Duan, M G a

a HUBEI UNIVERSITY (China)

b Hanyang University (South Korea)

Author keywords

Barium titanate; Conduction mechanism; Resistive switching; Sputtering; Thin films

Indexed keywords

BATIO; CONDUCTING PATHS; CONDUCTION MECHANISM; CURRENT CONDUCTION; CURRENT VOLTAGE CURVE; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; OHMIC CONDUCTION; POOLE-FRENKEL EMISSION; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; RF MAGNETRON SPUTTERING TECHNIQUE; SCHOTTKY EMISSIONS; SPACE-CHARGE-LIMITED; SWITCHING PROCESS; VALENCE CHANGE;

BARIUM; BARIUM TITANATE; ELECTROFORMING; FILM THICKNESS; MAGNETRON SPUTTERING; PLATINUM; SCANNING ELECTRON MICROSCOPY; SILICON; SPUTTERING; THIN FILMS; X RAY DIFFRACTION;

SWITCHING SYSTEMS;

EID: 84862789168 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2012.01.013 Document Type: Article

Times cited : (31)

References (23)

1
- 67650102619
- R. Waser, R. Dittmann, G. Staikov, and K. Szot Adv. Mater. 21 2009 2632
- (2009) Adv. Mater. , vol.21 , pp. 2632
- Waser, R.¹ Dittmann, R.² Staikov, G.³ Szot, K.⁴

2
- 73949083907
- C. Kügeler, R. Weng, H. Schroeder, R. Symanczyk, P. Majewski, K.D. Ufert, R. Waser, and M. Kund Thin Solid Films 518 2010 2258
- (2010) Thin Solid Films , vol.518 , pp. 2258
- Kügeler, C.¹ Weng, R.² Schroeder, H.³ Symanczyk, R.⁴ Majewski, P.⁵ Ufert, K.D.⁶ Waser, R.⁷ Kund, M.⁸

3
- 79958129096
- H.C. Cheng, S.W. Chen, and J.M. Wu Thin Solid Films 519 2011 6155
- (2011) Thin Solid Films , vol.519 , pp. 6155
- Cheng, H.C.¹ Chen, S.W.² Wu, J.M.³

4
- 22144448904
- C. Rohde, B.J. Choi, D.S. Jeong, S. Choi, J.S. Zhao, and C.S. Hwang Appl. Phys. Lett. 86 2005 262907
- (2005) Appl. Phys. Lett. , vol.86 , pp. 262907
- Rohde, C.¹ Choi, B.J.² Jeong, D.S.³ Choi, S.⁴ Zhao, J.S.⁵ Hwang, C.S.⁶

5
- 34648835089
- A. Chen, S. Haddad, Y.C. Wu, Z. Lan, T.N. Fang, and S. Kaza Appl. Phys. Lett. 91 2007 123517
- (2007) Appl. Phys. Lett. , vol.91 , pp. 123517
- Chen, A.¹ Haddad, S.² Wu, Y.C.³ Lan, Z.⁴ Fang, T.N.⁵ Kaza, S.⁶

6
- 73649141715
- S. Lee, H. Kim, D.J. Yun, S.W. Rhee, and K. Yong Appl. Phys. Lett. 95 2009 262113
- (2009) Appl. Phys. Lett. , vol.95 , pp. 262113
- Lee, S.¹ Kim, H.² Yun, D.J.³ Rhee, S.W.⁴ Yong, K.⁵

7
- 77953004840
- H.Y. Peng, G.P. Li, J.Y. Ye, Z.P. Wei, Z. Zhang, D.D. Wang, G.Z. Xing, and T. Wu Appl. Phys. Lett. 96 2010 192113
- (2010) Appl. Phys. Lett. , vol.96 , pp. 192113
- Peng, H.Y.¹ Li, G.P.² Ye, J.Y.³ Wei, Z.P.⁴ Zhang, Z.⁵ Wang, D.D.⁶ Xing, G.Z.⁷ Wu, T.⁸

8
- 77957693621
- S.W. Chen, and J.M. Wu Thin Solid Films 519 2010 499
- (2010) Thin Solid Films , vol.519 , pp. 499
- Chen, S.W.¹ Wu, J.M.²

9
- 77956845950
- X.B. Yan, Y.D. Xia, H.N. Xu, X. Gao, H.T. Li, R. Li, J. Yin, and Z.G. Liu Appl. Phys. Lett. 97 2010 112101
- (2010) Appl. Phys. Lett. , vol.97 , pp. 112101
- Yan, X.B.¹ Xia, Y.D.² Xu, H.N.³ Gao, X.⁴ Li, H.T.⁵ Li, R.⁶ Yin, J.⁷ Liu, Z.G.⁸

10
- 39349109608
- H. Kohlstedt, A. Petraru, K. Szot, A. Rüdiger, P. Meuffels, H. Haselier, R. Waser, and V. Nagarajan Appl. Phys. Lett. 92 2008 062907
- (2008) Appl. Phys. Lett. , vol.92 , pp. 062907
- Kohlstedt, H.¹ Petraru, A.² Szot, K.³ Rüdiger, A.⁴ Meuffels, P.⁵ Haselier, H.⁶ Waser, R.⁷ Nagarajan, V.⁸

11
- 79959359101
- X.M. Chen, G.H. Wu, H.L. Zhang, N. Qin, T. Wang, F.F. Wang, W.Z. Shi, and D.H. Bao Appl. Phys. A 100 2010 987
- (2010) Appl. Phys. A , vol.100 , pp. 987
- Chen, X.M.¹ Wu, G.H.² Zhang, H.L.³ Qin, N.⁴ Wang, T.⁵ Wang, F.F.⁶ Shi, W.Z.⁷ Bao, D.H.⁸

12
- 79952310801
- C.H. Jung, S.I. Woo, Y.S. Kim, and K.S. No Thin Solid Films 519 2011 3291
- (2011) Thin Solid Films , vol.519 , pp. 3291
- Jung, C.H.¹ Woo, S.I.² Kim, Y.S.³ No, K.S.⁴

13
- 0037930385
- 8th ed. Wiley New York
- C. Kittle Introduction to Solid State Physics 8th ed. 2005 Wiley New York
- (2005) Introduction to Solid State Physics
- Kittle, C.¹

14
- 0029370138
- S. Ken-ichi, M. Yasunori, A. Hiroyuki, N. Eiji, K. Mikihiko, H. Tomoyuki, I. Daisuke, K. Akihiro, H. Ken-ichi, and I. Takuro Jpn. J. Appl. Phys. 34 1995 5443
- (1995) Jpn. J. Appl. Phys. , vol.34 , pp. 5443
- Ken-Ichi, S.¹ Yasunori, M.² Hiroyuki, A.³ Eiji, N.⁴ Mikihiko, K.⁵ Tomoyuki, H.⁶ Daisuke, I.⁷ Akihiro, K.⁸ Ken-Ichi, H.⁹ Takuro, I.¹⁰

15
- 10644266055
- A. Visinoiu, R. Scholz, M. Alexe, and D. Hesse Appl. Phys. A 80 2005 229
- (2005) Appl. Phys. A , vol.80 , pp. 229
- Visinoiu, A.¹ Scholz, R.² Alexe, M.³ Hesse, D.⁴

16
- 67649133369
- D.S. Jeong, H. Schroeder, and R. Waser Phys. Rev. B 79 2009 195317
- (2009) Phys. Rev. B , vol.79 , pp. 195317
- Jeong, D.S.¹ Schroeder, H.² Waser, R.³

17
- 0004005306
- 2nd ed. Wiley New York
- S.M. Sze Physics of Semiconductor Devices 2nd ed. 1981 Wiley New York
- (1981) Physics of Semiconductor Devices
- Sze, S.M.¹

18
- 36849101960
- J.R. Yeargan, and H.L. Taylor J. Appl. Phys. 39 1968 5600
- (1968) J. Appl. Phys. , vol.39 , pp. 5600
- Yeargan, J.R.¹ Taylor, H.L.²

19
- 79955713334
- C.J. Won, Y.A. Park, K.D. Lee, H.Y. Ryu, and N. Hur J. Appl. Phys. 109 2011 084108
- (2011) J. Appl. Phys. , vol.109 , pp. 084108
- Won, C.J.¹ Park, Y.A.² Lee, K.D.³ Ryu, H.Y.⁴ Hur, N.⁵

20
- 10044237971
- A. Sawa, T. Fujii, M. Kawasaki, and Y. Tokura Appl. Phys. Lett. 85 2004 4073
- (2004) Appl. Phys. Lett. , vol.85 , pp. 4073
- Sawa, A.¹ Fujii, T.² Kawasaki, M.³ Tokura, Y.⁴

21
- 77956032359
- S. Kim, and Y.K. Choi IEEE Trans. Electron Devices 56 2009 3049
- (2009) IEEE Trans. Electron Devices , vol.56 , pp. 3049
- Kim, S.¹ Choi, Y.K.²

22
- 77957717079
- A. Sawa Mater. Today 11 2008 6
- (2008) Mater. Today , vol.11 , pp. 6
- Sawa, A.¹

23
- 34247877733
- X. Wu, P. Zhou, J. Li, L.Y. Chen, H. Lin, and T.A. Tang Appl. Phys. Lett. 90 2007 183507
- (2007) Appl. Phys. Lett. , vol.90 , pp. 183507
- Wu, X.¹ Zhou, P.² Li, J.³ Chen, L.Y.⁴ Lin, H.⁵ Tang, T.A.⁶

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