Structural properties and resistive switching behaviour in Mg xZn1-xO alloy films grown by pulsed laser deposition

Journal of Physics D: Applied Physics

Volumn 44, Issue 1, 2011, Pages

  Cao, Xun ^a,b   Li, Xiaomin ^a   Gao, Xiangdong ^a   Liu, Xinjun ^a   Yang, Chang ^a,b   Chen, Lidong ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY FILM; BAND GAPS; CRYSTALLINE GRAINS; FILM STRUCTURE; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; MG CONCENTRATIONS; MG CONTENT; MODEL-BASED; PULSED LASER; RESISTIVE SWITCHING; THERMAL TREATMENT;

METALLIC FILMS; PULSED LASER DEPOSITION; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SWITCHING SYSTEMS; ZINC;

PULSED LASERS;

EID: 78650648383     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/1/015302     Document Type: Article

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