Interfacial resistive switching properties in Ti/La 0.7Ca 0.3MnO 3/Pt sandwich structures

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 5, 2010, Pages 1204-1209

  Liu, X J ^a   Li, X M ^a   Wang, Q ^a   Yang, R ^a,b   Cao, X ^a,b   Yu, W D ^a   Chen, L D ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE FILAMENTS; ELECTROCHEMICAL MIGRATION; HIGHER TEMPERATURES; I - V CURVE; IN-SITU; LARGE HYSTERESIS; LOW-RESISTANCE STATE; OXYGEN ANNEALING; RESISTIVE SWITCHING; ROOM TEMPERATURE; TIO;

CALCIUM; CURRENT VOLTAGE CHARACTERISTICS; HYSTERESIS; MANGANESE OXIDE; OXYGEN; PLATINUM; PULSED LASER DEPOSITION; PULSED LASERS; SWITCHING; SWITCHING SYSTEMS;

OXYGEN VACANCIES;

EID: 77952712607     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200925409     Document Type: Conference Paper

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