A multi scale modeling approach to non-radiative multi phonon transitions at oxide defects in MOS structures

Journal of Computational Electronics

Volumn 11, Issue 3, 2012, Pages 218-224

  Schanovsky, F ^a   Baumgartner, O ^a   Sverdlov, V ^a   Grasser, T ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

Bias temperature instabilities; BTI; Density functional theory; DFT; Multi scale modeling; NMP; Non radiative multi phonon theory; Random telegraph noise; RTN; Temperature activated hole capture

Indexed keywords

BIAS TEMPERATURE INSTABILITY; BTI; DFT; HOLE CAPTURE; MULTI-SCALE MODELING; NMP; PHONON THEORY; RANDOM TELEGRAPH NOISE; RTN;

DEFECTS; HYDROGEN; INTEGRATED CIRCUITS; PHONONS;

DENSITY FUNCTIONAL THEORY;

EID: 84871919875     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-012-0403-1     Document Type: Conference Paper

References (38)

1. Jeppson, K., Svensson, C.: J. Appl. Phys. 48(5), 2004 (1977)
2. Schroder, D.K.: Microelectron. Reliab. 47, 841 (2007)
3. Grasser, T., Kaczer, B., Goes, W., Aichinger, T., Hehenberger, P., Nelhiebel, M.: In: Proc. Intl. Rel. Phys. Symp., pp. 33-44 (2009)
4. Grasser, T., Kaczer, B., Gös, W., Reisinger, H., Aichinger, T., Hehenberger, P., Wagner, P.J., Schanovsky, F., Franco, J., Toledano-Luque, M., Nelhiebel, M.: IEEE Trans. Electron Devices 58(11), 3652 (2011)
5. Kirton, M., Uren, M.: Appl. Phys. Lett. 48, 1270 (1986)
6. Grasser, T., Reisinger, H., Wagner, P.J., Kaczer, B.: In: Proc. Intl. Rel. Phys. Symp., pp. 16-25 (2010)
7. Fleetwood, D., Xiong, H., Lu, Z.Y., Nicklaw, C., Felix, J., Schrimpf, R., Pantelides, S.: IEEE Trans. Nucl. Sci. 49(6), 2674 (2002)
8. Kaczer, B., Grasser, T., Martin-Martinez, J., Simoen, E., Aoulaiche, M., Roussel, P., Groeseneken, G.: In: Proc. Intl. Rel. Phys. Symp., pp. 55-60 (2009)
9. Wagner, P., Aichinger, T., Grasser, T., Nelhiebel, M., Vandamme, L.: In: Proc. Intl. Conf. Noise Fluct., pp. 621-624 (2009)
10. Blöchl, P.E., Stathis, J.H.: Phys. Rev. Lett. 83(2), 372 (1999)
11. Blöchl, P.E.: Phys. Rev. B 62(10), 6158 (2000)
12. Huang, K., Rhys, A.: Proc. R. Soc. A 204, 406 (1950)
13. Henry, C.H., Lang, D.V.: Phys. Rev. B 15(15), 989 (1977)
14. Makram-Ebeid, S., Lannoo, M.: Phys. Rev. B 25(10), 6406 (1982)
15. Palma, A., Godoy, A., Jemènez-Tejada, J.A., Carceller, J.E., López-Villanueva, J.A.: Phys. Rev. B 56(15), 9565 (1997)
16. Garetto, D., Randiamihaja, Y.M., Rideau, D., Dornel, E., Clark, W.F., Schmid, A., Huard, V., Jaouen, H., Leblebici, Y.: In: Proc. Intl. Worksh. Comput. Electron., pp. 327-330 (2010)
17. Zheng, J.H., Tan, H.S., Ng, S.C.: J. Phys., Condens.Matter 6, 1695 (1994)
18. Grasser, T., Reisinger, H., Goes, W., Aichinger, T., Hehenberger, P.,Wagner, P., Nelhiebel, M., Franco, J., Kaczer, B.: In: Proc. Intl. Electron Devices Meeting, pp. 729-732 (2009)
19. Reisinger, H., Grasser, T., Schlünder, C., Gustin,W.: In: Proc. Intl. Rel. Phys. Symp., pp. 7-15 (2010)
20. Grasser, T., Reisinger, H., Wagner, P., Kaczer, B.: Phys. Rev. B 82, 245318 (2010)
21. Schanovsky, F., Goes,W., Grasser, T.: J. Comput. Electron. 9, 135 (2010)
22. Schanovsky, F.: In: Proc. Intl. Worksh. Comput. Electron., pp. 163-166 (2010)
23. Schanovsky, F., Goes, W., Grasser, T.: J. Vac. Sci. Technol. B 29, 01A201 (2011)
24. Schanovsky, F., Baumgartner, O., Grasser, T.: In: Proc. Simu. Semicond. Proc. Dev., pp. 15-18 (2011)
25. Schenk, A.: J. Appl. Phys. 71, 3339 (1992)
26. Zapol, B.: Chem. Phys. Lett. 93(6), 549 (1982)
27. Schmidt, P.P.: Mol. Phys. 108, 1513 (2010)
28. Abakumov, V., Perel, V., Yassievich, I.: Nonradiative Recombination in Semiconductors. North-Holland, Amsterdam (1991)
29. Grasser, T.: Microelectron. Reliab. 52(1), 39 (2011). doi:10.1016/j.microrel.2011.09.002
30. Baumgartner, O., Karner, M., Kosina, H.: In: Proc. Simu. Semicond. Proc. Dev., pp. 353-356 (2008). doi:10.1109/SISPAD.2008.4648310
31. Kresse, G., Furthmüller, J.: Phys. Rev. B 54(11), 11169 (1996)
32. Kresse, G., Joubert, D.: Phys. Rev. B 59, 1758 (1999)
33. Rudra, J.K., Fowler, W.B.: Phys. Rev. B 35(15), 8223 (1987)
34. Mysovsky, A.S., Sushko, P.V., Mukhopadhyay, S., Edwards, A.H., Shluger, A.L.: Phys. Rev. B 69(8), 085202 (2004)
35. Drabold, D.A., Estreicher, S.K. (eds.): Theory of Defects in Semiconductors. Springer, Berlin (2010)
36. Karner, M., Gehring, A., Holzer, S., Pourfath, M., Wagner, M., Goes, W., Vasicek, M., Baumgartner, O., Kernstock, C., Schnass, K., Zeiler, G., Grasser, T., Kosina, H., Selberherr, S.: J. Comput. Electron. 6, 179 (2007). doi:10.1007/s10825-006-0077-7 (Pubitemid 46637992)
37. Shockley, W., Read, W.T.: Phys. Rev. 87, 835 (1952)
38. Schenk, A.: Solid-State Electron. 35, 1585 (1992)