Multi scale modeling of multi phonon hole capture in the context of NBTI

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2011, Pages 15-18

  Schanovsky, F ^a   Baumgartner, O ^a   Grasser, T ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

GATE OXIDE; GATE VOLTAGES; HOLE CAPTURE; HYDROGEN BRIDGES; LINE SHAPE; MOS STRUCTURE; MULTI-SCALE MODELING; NON-EQUILIBRIUM GREEN'S FUNCTION FORMALISM; NON-RADIATIVE; OPEN QUANTUM SYSTEMS; PHONON PROCESS;

DENSITY FUNCTIONAL THEORY; GREEN'S FUNCTION; INTEGRATED CIRCUITS; OXYGEN VACANCIES; PHONONS; QUANTUM ELECTRONICS; QUANTUM OPTICS;

SEMICONDUCTOR DEVICE MODELS;

EID: 80054976659     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2011.6035038     Document Type: Conference Paper

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