An advanced description of oxide traps in MOS transistors and its relation to DFT

Journal of Computational Electronics

Volumn 9, Issue 3-4, 2010, Pages 135-140

  Schanovsky, F ^a   Gos W ^a   Grasser, T ^a  

^a NONE   (Austria)

Author keywords

DFT; Line shape function; NBTI; Oxide defects; RTS

Indexed keywords

ATOMIC SCALE; CAPTURE CROSS SECTIONS; CARRIER ENERGY; CHARGE STATE; DENSITY FUNCTIONAL THEORY CALCULATIONS; DEVICE SIMULATIONS; DFT; DFT CALCULATION; HARMONIC APPROXIMATION; LINE SHAPE; LINE SHAPE FUNCTION; MODEL PARAMETERS; MOS TRANSISTORS; NBTI; NEGATIVE BIAS TEMPERATURE INSTABILITY; OSCILLATOR FREQUENCY; OXIDE TRAPS; RTS;

DEFECTS; DENSITY FUNCTIONAL THEORY; FUNCTION EVALUATION; HARMONIC FUNCTIONS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; TRANSISTOR TRANSISTOR LOGIC CIRCUITS;

SEMICONDUCTOR DEVICE MODELS;

EID: 78649903064     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-010-0323-x     Document Type: Article

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