Microscopic four-point-probe resistivity measurements of shallow, high density doping layers in silicon

Applied Physics Letters

Volumn 101, Issue 26, 2012, Pages

  Polley, Craig M ^a   Clarke, Warrick R ^a   Miwa, Jill A ^a   Simmons, Michelle Y ^a   Wells, Justin W ^b,c  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^c LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

2D LAYER; CONVENTIONAL MICROELECTRONICS; DOPING LAYERS; FOUR POINT PROBE; FOUR-PROBE; HIGH DENSITY; MATERIAL SYSTEMS; NANO SCALE; QUANTUM-ELECTRONIC DEVICES; RESISTIVITY MEASUREMENT; ROOM-TEMPERATURE RESISTIVITY; VARIABLE SPACING;

D REGION; DOPING (ADDITIVES); MICROELECTRONICS; MONOLAYERS; PHOSPHORUS; QUANTUM ELECTRONICS;

SILICON;

EID: 84871758072     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4773485     Document Type: Article

References (22)

1. A. S. Walton, C. S. Allen, K. Critchley, M. L. Górzny, J. E. McKendry, R. M. D. Brydson, B. J. Hickey, and S. D. Evans, Nanotechnology 18, 065204 (2007). 10.1088/0957-4484/18/6/065204
2. S.-H. Ji, J. B. Hannon, R. M. Tromp, V. Perebeinos, J. Tersoff, and F. M. Ross, Nature Mater. 11, 114 (2012). 10.1038/nmat3170
3. F. Song, L. Gammelgaard, Ph. Hofmann, and J. W. Wells, Appl. Phys. Lett. 98, 052106 (2011). 10.1063/1.3543853
4. T. Hirahara, Y. Sakamoto, Y. Saisyu, H. Miyazaki, S. Kimura, T. Okuda, I. Matsuda, S. Murakami, and S. Hasegawa, Phys. Rev. B 81, 165422 (2010). 10.1103/PhysRevB.81.165422
5. D. H. Petersen, O. Hanseņ T. M. Hansen, P. Bøggild, R. Lin, D. Kjær, P. F. Nielsen, T. Clarysse, W. Vandervorst, E. Rosseel, N. S. Bennett, and N. E. B. Cowern, J. Vac. Sci. Technol. B 28, C1C27 (2010). 10.1116/1.3224898
6. M. Fueschle, J. A. Miwa, S. Mahapatra, H. Ryu, S. Lee, O. Warschkow, L. C. L. Hollenberg, G. Klimeck, and M. Y. Simmons, Nat. Nanotechnol. 7, 242 (2012). 10.1038/nnano.2012.21
7. S. Mahapatra, H. Büch, and M. Y. Simmons, Nano Lett. 11, 4376 (2011). 10.1021/nl2025079
8. C. Liu, I. Matsuda, S. Yoshimoto, T. Kanagawa, and S. Hasegawa, Phys. Rev. B 78, 035326 (2008). 10.1103/PhysRevB.78.035326
9. V. Cherepanov, E. Zubkov, H. Junker, S. Korte, M. Blab, P. Coenen, and B. Voigtländer, Rev. Sci. Instrum. 83, 033707 (2012). 10.1063/1.3694990
10. S. R. Schofield, N. J. Curson, M. Y. Simmons, F. J. Reuß, T. Hallam, L. Oberbeck, and R. G. Clark, Phys. Rev. Lett. 91, 136104 (2003). 10.1103/PhysRevLett.91.136104
11. K. E. J. Goh, L. Oberbeck, M. Y. Simmons, A. R. Hamilton, and R. G. Clark, Appl. Phys. Lett. 85, 4953 (2004). 10.1063/1.1827940
12. L. Oberbeck, N. J. Curson, T. Hallam, M. Y. Simmons, G. Bilger, and R. G. Clark, Appl. Phys. Lett. 85, 1359 (2004). 10.1063/1.1784881
13. S. R. McKibbin, W. R. Clarke, A. Fuhrer, T. C. G. Reusch, and M. Y. Simmons, Appl. Phys. Lett. 95, 233111 (2009). 10.1063/1.3269924
14. D. K. Schroder, Semiconductor Material and Device Characterization (John Wiley Sons, 1990), p. 2.
15. J. W. Wells, J. F. Kallehauge, T. M. Hansen, and Ph. Hofmann, Phys. Rev. Lett. 97, 206803 (2006). 10.1103/PhysRevLett.97.206803
16. J. W. Wells, K. Handrup, J. F. Kallehauge, L. Gammelgaard, P. Bøggild, M. B. Balslev, J. E. Hansen, P. R. E. Petersen, and Ph. Hofmann, J. Appl. Phys. 104, 053717 (2008). 10.1063/1.2969769
17. Ph. Hofmann and J. W. Wells, J. Phys. Condens. Matter. 21, 013003 (2009). 10.1088/0953-8984/21/1/013003
18. F. J. Himpsel, P. Heimann, T. C. Chiang, and D. E. Eastman, Phys. Rev. Lett. 45, 1112 (1980). 10.1103/PhysRevLett.45.1112
19. P. Mårtensson, A. Cricenti, and G. V. Hansson, Phys. Rev. B 33, 8855 (1986). 10.1103/PhysRevB.33.8855
20. T. Clarysse, P. DeWolf, H. Bender, and W. Vandervorst, J. Vac. Sci. B 14, 358 (1996). 10.1116/1.588475
21. T. Clarysse, D. Vanhaeren, and W. Vandervorst, J. Vac. Sci. Technol. B 20, 459 (2002). 10.1116/1.1432965
22. J. C. Ho, R. Yerushalmi, G. Smith, P. Majhi, J. Bennet, J. Halim, V. N. Faifer, and A. Javey, Nano Lett. 9, 725 (2009). 10.1021/nl8032526