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Volumn 11, Issue 10, 2011, Pages 4376-4381

Charge sensing of precisely positioned p donors in si

Author keywords

Charge sensing; electron tunneling; P donors in Si; quantum computing; STM lithography

Indexed keywords

ATOMIC SCALE; CHARGE SENSING; CHARGE SENSITIVITY; CURRENT RESPONSE; DEVICE GEOMETRIES; P DONORS; QUANTUM COMPUTING; QUBIT STATE; REAL TIME SENSING; SCALABLE QUANTUM COMPUTING; SCANNING TUNNELING MICROSCOPY (STM); SI(001) SURFACES; SINGLE ELECTRON; SINGLE ELECTRON TUNNELING; SINGLE-SHOT; SPIN-QUBITS; STM LITHOGRAPHY; TIME-AVERAGED; TIME-SCALES; ULTRA-SMALL;

EID: 80054028627     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl2025079     Document Type: Article
Times cited : (46)

References (24)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.