SCOPUS 정보 검색 플랫폼

Volumn 24, Issue 3, 2013, Pages

Tuning resistive switching on single-pulse doped multilayer memristors

(7) Siles, Pablo F a,b,c De Pauli, Muriel c,d Bof Bufon, Carlos Cesar a,e Ferreira, Sukarno O c,f Bettini, Jefferson c Schmidt, Oliver G a,b Malachias, Angelo c,g

a IFW DRESDEN (Germany)

b CHEMNITZ UNIVERSITY OF TECHNOLOGY (Germany)

c LABORATÓRIO NACIONAL DE LUZ SÍNCROTRON (Brazil)

d UNIVERSITY OF CAMPINAS (Brazil)

e BRAZILIAN CENTER FOR RESEARCH IN ENERGY AND MATERIALS CNPEM (Brazil)

f FEDERAL UNIVERSITY OF VIÇOSA (Brazil)

g FEDERAL UNIVERSITY OF MINAS GERAIS (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ALD GROWTH; ATOMIC LAYER; CHEMICAL CONTROLS; CHEMICAL ENVIRONMENT; COMPOUND FORMATION; CRYSTALLINE PHASIS; ELECTRIC-FIELD-POLARIZATION; ELECTRICAL CHARACTERISTIC; ELECTRICAL DEVICES; ELECTRICAL RESISTIVITY; GROWTH METHOD; OXIDE COMPOUNDS; OXIDE THIN FILMS; RESISTIVE SWITCHING; SINGLE-PULSE; TECHNOLOGICAL APPLICATIONS; TIO; ULTRA-THIN;

ALUMINUM; ATOMIC LAYER DEPOSITION; CHEMICAL COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; FILM GROWTH; FILM PREPARATION; MEMRISTORS; MONOLAYERS; PASSIVE FILTERS; RESISTORS; SEMICONDUCTOR DOPING; SWITCHING SYSTEMS; TITANIUM DIOXIDE;

MULTILAYERS;

EID: 84871605201 PISSN: 09574484 EISSN: 13616528 Source Type: Journal
DOI: 10.1088/0957-4484/24/3/035702 Document Type: Article

Times cited : (18)

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