Sketched oxide single-electron transistor

Nature Nanotechnology

Volumn 6, Issue 6, 2011, Pages 343-347

  Cheng, Guanglei ^a   Siles, Pablo F ^b,c   Bi, Feng ^a   Cen, Cheng ^a   Bogorin, Daniela F ^a   Bark, Chung Wung ^d   Folkman, Chad M ^d   Park, Jae Wan ^d   Eom, Chang Beom ^d   Medeiros Ribeiro, Gilberto ^e   Levy, Jeremy ^a  

^a UNIVERSITY OF PITTSBURGH   (United States)

^b LABORATÓRIO NACIONAL DE LUZ SÍNCROTRON   (Brazil)

^c UNIVERSITY OF CAMPINAS   (Brazil)

^d Wisconsin Electric Machines and Power Electronics Consortium   (United States)

^e HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DATA STORAGE EQUIPMENT; ELECTRODES; ELECTRONS; FIELD EFFECT TRANSISTORS; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; QUANTUM OPTICS; REFRACTORY METAL COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; SIMULATION PLATFORM;

CONDUCTING OXIDES; ELECTRON OCCUPATION; NANOSCALE HYBRIDS; NON-VOLATILE MEMORY; NUMBER OF ELECTRONS; QUANTUM-INFORMATION PROCESSING; SINGLE-ELECTRON DEVICES; SOURCE AND DRAIN ELECTRODES;

SINGLE ELECTRON TRANSISTORS;

METAL; OXIDE;

ARTICLE; ATOMIC FORCE MICROSCOPY; BIOSENSOR; ELECTRICITY; ELECTRODE; ELECTRON; HYSTERESIS; MICROSCOPE; PIEZOELECTRICITY; PRIORITY JOURNAL; QUANTUM MECHANICS; SEMICONDUCTOR; SIMULATION;

EID: 85027919594     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2011.56     Document Type: Article

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