Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrate

Japanese Journal of Applied Physics

Volumn 51, Issue 11, 2012, Pages

  Arulkumaran, Subramaniam ^a   Ng, Geok Ing ^b   Vicknesh, Sahmuganathan ^a   Wang, Hong ^b   Ang, Kian Siong ^a   Tan, Joyce Pei Ying ^c   Lin, Vivian Kaixin ^c   Todd, Shane ^d   Lo, Guo Qiang ^d   Tripathy, Sudhiranjan ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^d INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; CRACK FREE; DIRECT CURRENT; EXTRINSIC TRANSCONDUCTANCE; GATE DEVICES; HIGH FREQUENCY HF; MAXIMUM DRAIN CURRENT; MAXIMUM OSCILLATION FREQUENCY; MICROWAVE CHARACTERISTICS; OFF-STATE BREAKDOWN VOLTAGES; SI (1 1 1); SI(111) SUBSTRATE; SUBMICRON; SWITCHING APPLICATIONS;

GALLIUM NITRIDE; SILICON;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84869131236     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.111001     Document Type: Article

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