A 76 GHz GaN-on-silicon power amplifier for automotive radar systems

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2009, Pages 665-668

  Yoshida, S ^a   Tanomura, M ^a   Murase, Y ^a   Yamanoguchi, K ^a   Ota, K ^a   Matsunaga, K ^a   Shimawaki, H ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Gallium compounds; Millimeter wave power amplifiers; Millimeter wave radar; Silicon

Indexed keywords

ALGAN/GAN; AUTOMOTIVE RADAR SYSTEM; BREAKDOWN VOLTAGE; CPW LINE; LARGE SIGNAL MODELS; MAXIMUM OSCILLATION FREQUENCY; MICROWAVE-MONOLITHIC-IC; MILLIMETER WAVE RADAR; SILICON POWER AMPLIFIER; SILICON SUBSTRATES; TRANSMISSION LOSS;

GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; INSULATING MATERIALS; MESFET DEVICES; MICROWAVE CIRCUITS; MICROWAVE OSCILLATORS; MICROWAVES; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; POWER AMPLIFIERS; RADAR; RADAR SYSTEMS; SILICON COMPOUNDS; WAVE POWER;

GALLIUM ALLOYS;

EID: 77949942172     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2009.5165784     Document Type: Conference Paper

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