Figures of merit in high-frequency and high-power GaN HEMTs

Journal of Physics: Conference Series

Volumn 193, Issue , 2009, Pages

  Marino, F A ^a   Faralli, N ^a   Ferry, D K ^a   Goodnick, S M ^a   Saraniti, M ^a  

^a Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 74549222969     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/193/1/012040     Document Type: Conference Paper

References (4)

1. Johnson A 1965 Physical limitations on frequency and power parameters of transistors RCA Rev. 26 163-177
2. Palacios T, Y Dora, A Chakraborty, C Sanabria, S Keller, S P DenBaars and U K Mishra 2006 Optimization of AlGaN/GaN HEMTs for high frequency operation Physica Status Solidi A 203 (7) 1845-1850
3. Akis R, J Ayubi-Moak, N Faralli, D K Ferry, S M Goodnick and M Saraniti 2008 The upper limit of the cutoff frequency in ultrashort gate-length InGaAs/InAlAs HEMTs: A new definition of effective gate length IEEE Electron Device Lett. 29 (4) 306-308
4. Das P and D Ferry 1976 Hot electron microwave conductivity of wide bandgap semiconductors Japanese J. Appl. Phys. 19 851-855