DARPA's GaN technology thrust

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2010, Pages 1214-1217

  Rosker, Mark J ^a   Albrech, John D ^a   Cohen, Eliot ^b   Hodiak, Justin ^c   Chang, Tsu Hsi ^c  

^a DEFENSE ADVANCED RESEARCH PROJECTS AGENCY   (United States)

^b EBCO Technology Advising Inc   (United States)

^c BOOZ ALLEN HAMILTON   (United States)

Author keywords

Gallium Nitride; High electron mobility transistor

Indexed keywords

ACCESS RESISTANCE; BREAKDOWN VOLTAGE; ELECTRON DENSITIES; ELECTRON SATURATION VELOCITY; EPITAXIAL STRUCTURE; GAN HEMTS; GAN TECHNOLOGY; HETERO-INTERFACES; HIGH ELECTRON MOBILITY; HIGH-POWER; INTRINSIC BREAKDOWN; MIXED SIGNAL APPLICATIONS; PHASE I; POWER DEVICES; RF ELECTRONICS; SHEET CARRIER DENSITIES; SIZE SCALING; TRANSIT TIME;

CARRIER CONCENTRATION; CUTOFF FREQUENCY; ELECTRIC BREAKDOWN; ELECTRON MOBILITY; ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE; OPTIMIZATION; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77957790935     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2010.5514755     Document Type: Conference Paper

References (2)

1. A. Koudymov, M. Shur, G. Simi, K. Chu, P. C. Chao, C. Lee, J. Jimenez, and T Balistreri, "Analytical HFET I-V Model in Presence of Current Collapse," Transactions on Electron Devices, vol.55, no.3, pp. 712-720, March 2008.
2. M. J. Rosker, C. Bozada, H. Dietrich, A. Hung, D. Via, S. Binari, E. Vivieros, E. Cohen, and J. H. Hodiak, "The DARPA Wide Band Gap Semiconductors for RF Applications (WBGS-RF] Program: Phase II Results," CS ManTech, May 2009.